scholarly journals EPMA Sputter Depth Profiling: A New Technique for Quantitative in-Depth Analysis of Layered Structures

1995 ◽  
Vol 6 (4) ◽  
pp. 421-432 ◽  
Author(s):  
Peter Karduck ◽  
Alexander von Richthofen
Keyword(s):  
Depth Profiling ◽  
Layered Structures ◽  
New Technique ◽  
Depth Analysis ◽  
A New Technique

A Nuclear Reaction Analysis Technique to Determine The Penetration of Hydrogenic Species into Glasses Exposed to Leaching Solutions

1984 ◽  
Vol 44 ◽  
Author(s):  
L. M. Gignac ◽  
C. J. Altstetter ◽  
S. D. Brown
Keyword(s):  
Nuclear Reaction ◽  
Heavy Water ◽  
Depth Profiling ◽  
New Technique ◽  
Nuclear Reaction Analysis ◽  
Water Solutions ◽  
Analysis Technique ◽  
A New Technique

AbstractNuclear reaction analysis is discussed as a method for determining the distribution of deuterium beneath the surfaces of glasses exposed to heavy water solutions for various times and temperatures. Limited examples of both conventional depth profiling for deuterium and a new technique for deuterium mapping are presented. The possible use of deuterium mapping for investigating the kinetics and mechanisms of the leaching of glasses is discussed.

A New Technique for Depth Profiling on a Nanometer Scale

1995 ◽  
Vol 405 ◽  
Author(s):  
H. Schwenke ◽  
J. Knoth ◽  
R. Günther ◽  
G. Wiener ◽  
R. Bormann
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Source ◽  
New Technique ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
A New Technique

AbstractA new technique is presented for the determination of concentration depth profiles. Surface atoms are sputtered by an ion beam and deposited on a clean silicon wafer. The wafer is rotated behind a slit in step with the sputtering progress. In this way the depth profile of the sample is transferred into a lateral distribution of the sputtered atoms on the target wafer. Subsequently the wafer is scanned by Total Reflection X-ray Fluorescence Spectrometry (TXRF) which is capable of detecting traces of metallic impurities on wafers down to 10-4 of an atomic monolayer. The sequence of ion-beam sputtering, deposition of the sputtered atoms and TXRF analysis results in an excellent depth resolution in the case of areal structures. Using an ion source of the Kaufmann type, an extrapolated perpendicular resolution better than 0.1 nm was obtained for a 1500 mm2 surface. For a surface area of 3 mm2 a depth resolution of 1 nm is expected. 1.4 nm was actually measured to be the width of a coherent Ti/Al-interface within a layered structure.

A new technique for the mapping of oxygen tension on the brain surface

2005 ◽  
Vol 25 (1_suppl) ◽  
pp. S543-S543
Author(s):  
Satoshi Kimura ◽  
Keigo Matsumoto ◽  
Yoshio Imahori ◽  
Katsuyoshi Mineura ◽  
Toshiyuki Itoh
Keyword(s):  
Oxygen Tension ◽  
New Technique ◽  
Brain Surface ◽  
A New Technique ◽  
The Brain

A new technique to visualize alveolar dynamics in a rabbit model

2009 ◽  
Vol 56 (S 01) ◽  
Author(s):  
J Bickenbach ◽  
R Rossaint ◽  
R Autschbach ◽  
R Dembinski
Keyword(s):  
Rabbit Model ◽  
New Technique ◽  
A New Technique
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