NEGATIVE DIFFERENTIAL RESISTANCE OF In0.53Ga0.47As/In0.52Al0.48As RESONANT TUNNELING BARRIERS GROWN BY MBE

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-453-C5-456
Author(s):  
S. MUTO ◽  
T. INATA ◽  
Y. SUGIYAMA ◽  
Y. NAKATA ◽  
T. FUJII ◽  
...  
1988 ◽  
Vol 35 (12) ◽  
pp. 2453-2454 ◽  
Author(s):  
N. Tabatabaie ◽  
T. Sands ◽  
J.P. Harbison ◽  
H.L. Gilchrist ◽  
V.G. Keramidas

1999 ◽  
Vol 75 (1) ◽  
pp. 133-135 ◽  
Author(s):  
Shiou-Ying Cheng ◽  
Wen-Chau Liu ◽  
Wen-Lung Chang ◽  
Hsi-Jen Pan ◽  
Wei-Chou Wang ◽  
...  

2019 ◽  
Vol 1 (5) ◽  
pp. 735-744 ◽  
Author(s):  
Kalpana Agrawal ◽  
Vinay Gupta ◽  
Ritu Srivastava ◽  
S.S. Rajput

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.


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