Negative Differential Resistance by Molecular Resonant Tunneling between Neutral Tribenzosubporphine Anchored to a Au(111) Surface and Tribenzosubporphine Cation Adsorbed on to a Tungsten Tip

2013 ◽  
Vol 135 (38) ◽  
pp. 14159-14166 ◽  
Author(s):  
Yutaka Majima ◽  
Daisuke Ogawa ◽  
Masachika Iwamoto ◽  
Yasuo Azuma ◽  
Eiji Tsurumaki ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Differential Resistance ◽  
Tungsten Tip

Negative differential resistance in AlAs/NiAl/AlAs metal base quantum wells: toward a resonant tunneling transistor

1988 ◽  
Vol 35 (12) ◽  
pp. 2453-2454 ◽  
Author(s):  
N. Tabatabaie ◽  
T. Sands ◽  
J.P. Harbison ◽  
H.L. Gilchrist ◽  
V.G. Keramidas
Keyword(s):  
Quantum Wells ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Differential Resistance ◽  
Metal Base

Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor

1999 ◽  
Vol 75 (1) ◽  
pp. 133-135 ◽  
Author(s):  
Shiou-Ying Cheng ◽  
Wen-Chau Liu ◽  
Wen-Lung Chang ◽  
Hsi-Jen Pan ◽  
Wei-Chou Wang ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Differential Resistance

NEGATIVE DIFFERENTIAL RESISTANCE OF In0.53Ga0.47As/In0.52Al0.48As RESONANT TUNNELING BARRIERS GROWN BY MBE

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-453-C5-456
Author(s):  
S. MUTO ◽  
T. INATA ◽  
Y. SUGIYAMA ◽  
Y. NAKATA ◽  
T. FUJII ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Differential Resistance

Perovskite Resonant Tunneling FET with Sequential Negative Differential Resistance Peaks

2019 ◽  
Vol 1 (5) ◽  
pp. 735-744 ◽  
Author(s):  
Kalpana Agrawal ◽  
Vinay Gupta ◽  
Ritu Srivastava ◽  
S.S. Rajput
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Differential Resistance ◽  
Tunneling Fet

Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov
Keyword(s):  
Conduction Band ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Quantum Effect ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Current Ratio ◽  
Si Substrates ◽  
Tunneling Diodes

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

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