THE ENHANCEMENT OF THE DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY OF GD a-Si INTRODUCING O2, N2

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-695-C4-698 ◽  
Author(s):  
Wen Yuan Xu ◽  
Zhong Lin Sun ◽  
Zhong Pang Wang ◽  
De Lin Lee
Keyword(s):  
Dark Conductivity

Transport Path in Hydrogenated Microcrystalline Silicon

2002 ◽  
Vol 715 ◽  
Author(s):  
N. Wyrsch ◽  
C. Droz ◽  
L. Feitknecht ◽  
J. Spitznagel ◽  
A. Shah
Keyword(s):  
Raman Spectroscopy ◽  
Volume Fraction ◽  
Conductivity Measurement ◽  
Dark Conductivity ◽  
Transition Regime ◽  
Conductivity Data ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Crystalline Fraction ◽  
Transport Path

AbstractUndoped microcrystalline silicon samples deposited in the transition regime between amorphous and microcrystalline growth have been investigated by dark conductivity measurement and Raman spectroscopy. From the latter, a semi-quantitative crystalline volume fraction Xc of the sample was deduced and correlated with dark conductivity data in order to reveal possible percolation controlled transport. No threshold was observed around the critical crystalline fraction value Xc of 33%, as reported previously, but a threshold in conductivity data was found at Xc≈50%. This threshold is interpreted here speculatively as being the result of postoxidation, and not constituting an actual percolation threshold.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

Light-induced changes in dark conductivity of Kapton

1984 ◽  
Author(s):  
M. LEUNG ◽  
M. TUELING ◽  
P. MIZERA
Keyword(s):  
Dark Conductivity ◽  
Induced Changes

Amorphous Silicon Selenium Alloy Film Deposited Under Hydrogen Dilution

1991 ◽  
Vol 219 ◽  
Author(s):  
Muzhi He ◽  
Guang H. Lin ◽  
J. O'M. Bockris
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Selenium Concentration ◽  
Alloy Film ◽  
Dark Conductivity ◽  
Flow Rate Ratio ◽  
Selenium Atom ◽  
Alloy Films ◽  
Hydrogen Dilution ◽  
Photo Response

ABSTRACTAmorphous silicon selenium alloy films were prepared by plasma enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of hydrogen to silane was about 8:1. Amorphous silicon selenium alloy was found to have an optical bandgap ranging from 1.7 eV to 2.0 eV depending on the selenium concentration in the films. The light to dark conductivity ratios of the alloy films are ∼ 104. The optical and electrical properties, Urbach tail energy and sub-bandgap photo response spectroscopy of the alloy film were investigated. The film quality of the alloy deposited with hydrogen dilution is greatly improved comparing to that of the alloy film deposited without hydrogen dilution. The electron spin resonance experiment shows that selenium atom is a good dangling bond terminator.

Electronic Transport Properties of a-Si:H,F/a-Si,Ge:H,F Superlattices

1987 ◽  
Vol 95 ◽  
Author(s):  
J. P. Conde ◽  
S. Aljishi ◽  
D. S. Shen ◽  
V. Chu ◽  
Z E. Smith ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Electronic Transport ◽  
Thermal Emission ◽  
Parallel Transport ◽  
Dark Conductivity ◽  
Alloy Layer ◽  
Conductivity Activation Energy ◽  
Superlattice Structures ◽  
Deposition Conditions ◽  
Extract Information

AbstractWe study the dark conductivity σd, dark conductivity activation energy Ea and photoconductivity σph of a-Si:H,F/a-Si,Ge:H,F superlattices both perpendicular and parallel to the plane of the layers. In parallel transport, both the σph and σd are dominated by the alloy layer characteristics with the superposition of carrier confinement quantum effects. In perpendicular transport, the σd shows an interplay of quantum mechanical tunneling through the barriers and of classical thermal emission over the barrier layer and the σph is controlled by the decreasing absorption by the silicon barrier layer as the optical gap Eopt of the structure decreases.We also found that the multilayer structure allows to grow lower gap a-Si,Ge:H,F alloys than achievable under the same deposition conditions for bulk materials. This stabilizing effect allowed us to study low-gap superlattice structures and extract information about these very low gap (<1.2 eV) a- Si,Ge:H,F alloys.

Ferroelectric Liquid Crystal Light Valve Using SiO2 / A-Si:H Photodiode

1991 ◽  
Vol 219 ◽  
Author(s):  
T. Horikawa ◽  
S. Tahata ◽  
S. Kaho ◽  
T. Masumi ◽  
N. Mikami ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Dark Conductivity ◽  
Ferroelectric Liquid Crystal ◽  
Two Dimensional ◽  
Metal Insulator ◽  
Resolution Capability ◽  
New Type ◽  
Light Valve ◽  
Mis Diode ◽  
High Photosensitivity

ABSTRACTA new type of ferroelectric liquid crystal light valve (FLCLV) is presented. The design of the FLCLV is based upon the linear equivalent circuit analyses. A photosensor in the FLCLV consists of a metal-insulator-semiconductor (MIS) photodiode. A-Si:H doped with boron and nitrogen [a-Si:(:N:B)] is used in the MIS diode. The a-Si:H(:B:N) film has a dark-conductivity of less than 1×1012 S/cm and a high photosensitivity.Consequently, the writing characteristics of the FLCLV for a two dimensional (2D) image are evaluated. Using writing light of 630 nm and 1 mW/cm2, a high resolution capability of 120∼140 1p/mm is obtained.

Intrinsic and Doped m c-Si:H TFT Layers using 13.56 MHz PECVD at 250°C

2004 ◽  
Vol 808 ◽  
Author(s):  
Czang-Ho Lee ◽  
Denis Striakhilev ◽  
Arokia Nathan
Keyword(s):  
Performance Improvement ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Rf Power ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Bias Stress ◽  
Hydrogen Dilution ◽  
Low Threshold

ABSTRACTUndoped and n+ hydrogenated microcrystalline silicon (μc-Si:H) films for thin film transistors (TFTs) were deposited at a temperature of 250°C with 99 ∼ 99.6 % hydrogen dilution of silane by standard 13.56 MHz plasma enhanced chemical vapor deposition (PECVD). High crystallinity m c-Si:H films were achieved at 99.6 % hydrogen dilution and at low rf power. An undoped 80 nm thick m c-Si:H film showed a dark conductivity of the order of 10−7 S/cm, the photosensitivity of an order of 102, and a crystalline volume fraction of 80 %. However, a 60 nm thick n+ μc-Si:H film deposited using a seed layer showed a high dark conductivity of 35 S/cm and a crystalline volume fraction of 60 %. Using n+ μc-Si:H films as drain and source contact layers in a-Si:H TFTs provides substantial performance improvement over n+ a-Si:H contacts. Finally, fully μ c-Si:H TFTs incorporating intrinsic m c-Si:H films as channel layers and n+ μc-Si:H films as contact layers have been fabricated and characterized. These TFTs exhibit a low threshold voltage and a field effect mobility of 0.85 cm2/Vs, and are far more stable under gate bias stress than a-Si:H TFTs.

scholarly journals Electrical and Dielectric Characterization of Bi12GeO20Prepared by Modified Pechini Method

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
C. G. P. Moraes ◽  
F. A. A. Jesus ◽  
Z. S. Macedo
Keyword(s):  
Volume Fraction ◽  
Pechini Method ◽  
Dark Conductivity ◽  
High Frequencies ◽  
Dielectric Characterization ◽  
Calcination Temperatures ◽  
Grain Sizes ◽  
Synthesis Parameters ◽  
Modified Pechini Method

Bismuth germanate (Bi12GeO20) ceramics were produced using modified Pechini route, and the synthesis parameters, crystalline phases, microstructure, and sintering conditions were investigated.Bi12GeO20powders with submicrometric particle sizes were investigated for calcination temperatures from 400 to 600°C, with soaking times of 1 h and 5 h. Controlling the synthesis parameters, dense ceramics with two different grain sizes of 3.4 ± 0.5 µm and 5.7 ± 0.8 µm could be produced after sintering at 750°C/1 h. The electric and dielectric properties of these ceramics were determined by impedance spectroscopy (IS). From the results, it was concluded that the dielectric permittivity measured at high frequencies is insensitive to the grain size, while the AC dark conductivity presents a noticeable dependency on this feature. This behaviour was discussed on the basis of a Maxwell-Wagner interfacial relaxation, whose intensity depends directly on the volume fraction of grain boundaries in the sample.

Metal-insulator transition in highly disordered carbon fibers

1992 ◽  
Vol 7 (4) ◽  
pp. 940-945 ◽  
Author(s):  
K. Kuriyama ◽  
M.S. Dresselhaus
Keyword(s):  
Carbon Fibers ◽  
Structural Changes ◽  
Dark Conductivity ◽  
Activated Carbon Fibers ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
Heat Treated ◽  
Insulator Metal Transition ◽  
Disordered Carbon ◽  
Diffraction Patterns

The electronic transition from localized to delocalized states of carriers in a disordered carbon material is investigated by photoconductivity measurements. Phenol-derived activated carbon fibers, where the carriers are strongly localized due to disorder, are heat treated in the range 300–2500 °C to give rise to the insulator-metal transition. Dark conductivity, Raman spectra, and x-ray diffraction patterns are also measured to characterize their structural changes. As a result, the transition temperature was determined to be rather low, around 1000 °C, considering the rapid decrease in the photoconductivity above this temperature. This decrease was ascribed to a fast recombination between the photoexcited carriers and the delocalized carriers generated by heat treatment.

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