Fatigue in Cu-Zn-Al single crystals during pseudoelastic cycling: In situ observations by SEM and optical microscopy

2003 ◽  
Vol 112 ◽  
pp. 623-626 ◽  
Author(s):  
C. Damiani ◽  
M. Sade ◽  
F. C. Lovey
Wear ◽  
1999 ◽  
Vol 233-235 ◽  
pp. 717-726 ◽  
Author(s):  
M.Munawar Chaudhri ◽  
Yuji Enomoto

2007 ◽  
Vol 307 (2) ◽  
pp. 341-347 ◽  
Author(s):  
Xinming Huang ◽  
Satoshi Uda ◽  
Hideyoshi Tanabe ◽  
Nobuyuki Kitahara ◽  
Hisao Arimune ◽  
...  

Author(s):  
Feng Tsai ◽  
Victoria Khiznichenko ◽  
J. M. Cowley

The previous studies on the behaviors of ferroelectric domains under applied electric fields were made by a number of researchers, e.g. Merz and Little on bulk BaTiO3 crystals with optical microscopy. It was suggested that under the applied electric field the new antiparallel domains nucleated and grew and 90° and 180° domains nucleated and grew sidewise. However, those results and conclusions were obtained from the experiments on large bulk crystals with optical microscopy of relatively lower magnification and resolution. TEM is a very powerful tool in the study of crystal structure and defects and may provide a new interpretation to the study of microdomains of hundred angstroms in thin ferroelectric films with a higher magnification and resolution and may be combined with electron diffraction. However, no reference has been found that an in-situ TEM study of the behaviors of ferroelectric materials under applied electric fields has ever been made.


Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].


2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Sze Hoon Gan ◽  
Zarinah Waheed ◽  
Fung Chen Chung ◽  
Davies Austin Spiji ◽  
Leony Sikim ◽  
...  

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