The role of the substrate surface area/reactor volume ratio in chemistry and kinetics of chemical vapor deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-79-Pr8-84 ◽  
Author(s):  
M. Teubner ◽  
J. Antes ◽  
Z. Hu ◽  
W. Zhang ◽  
K. J. Hüttinger
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Area ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Volume Ratio ◽  
Chemical Vapor ◽  
Reactor Volume ◽  
Kinetics Of

Role of plasma activation in kinetics of carbon nanotube growth in plasma-enhanced chemical vapor deposition

2012 ◽  
Vol 111 (7) ◽  
pp. 074307 ◽  
Author(s):  
Irina V. Lebedeva ◽  
Andrey A. Knizhnik ◽  
Alexey V. Gavrikov ◽  
Alexey E. Baranov ◽  
Boris V. Potapkin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Activation ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth ◽  
Kinetics Of

MODELING THE CVD GROWTH OF III-V- COMPOUNDS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 647-650
Author(s):  
J. MIMILA-ARROYO ◽  
J. DIAZ REYES
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Theoretical Models ◽  
Experimental Results ◽  
Reversible Chemical Reaction ◽  
Cvd Growth ◽  
Growing Conditions ◽  
Kinetics Of

Chemical vapor deposition is widely used for growing semiconductors. In it the best growing conditions are obtained on an empirical way. Its theoretical models are sophisticated and not accurate enough to correctly explain the experimental results. In this work, we present a general model to explain the epitaxial growth kinetics of III-V semiconductor materials by chemical vapor deposition. The model is based on a reversible chemical reaction between the transporting gas and the III element at the source and the same reaction, at the substrate surface. However, the model considers that the III element might have a different chemical activity at each one of those surfaces. The model explains experimental results reported in the literature on III-V materials, by several laboratories, over decades.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

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