Temperature dependence of hot-carrier effects in 0.2 µm N- and P-channel fully-depleted Unibond MOSFETs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-13-Pr3-16 ◽  
Author(s):  
S. H. Renn ◽  
C. Raynaud ◽  
F. Balestra
Keyword(s):  
Temperature Dependence ◽  
Fully Depleted ◽  
Hot Carrier ◽  
Hot Carrier Effects

Hot-carrier effects in thin-film fully depleted SOI MOSFET's

1994 ◽  
Vol 15 (6) ◽  
pp. 218-220 ◽  
Author(s):  
Z.J. Ma ◽  
H.J. Wann ◽  
M. Chan ◽  
J.C. King ◽  
Y.C. Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Fully Depleted ◽  
Hot Carrier ◽  
Hot Carrier Effects

Hot Carrier Effects in Deep Submicron Nmosfets

1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha
Keyword(s):  
Electric Fields ◽  
Channel Length ◽  
Deep Submicron ◽  
Short Channel ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Substrate Current ◽  
Hot Carrier Effects ◽  
Saturation Effects ◽  
Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

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