scholarly journals DIRECT MEASUREMENT OF THE LOCAL DIFFUSION LENGTH GRAIN BOUNDARIES BY EBIC WITHOUT A SCHOTTKY CONTACT

1991 ◽  
Vol 01 (C6) ◽  
pp. C6-101-C6-106 ◽  
Author(s):  
J. PALM ◽  
H. ALEXANDER
Keyword(s):  
Grain Boundaries ◽  
Direct Measurement ◽  
Diffusion Length ◽  
Schottky Contact ◽  
Local Diffusion

Direct measurement of non-equilibrium solute segregation to grain boundaries

1969 ◽  
Vol 3 (9) ◽  
pp. 663-665 ◽  
Author(s):  
S.J. Bercovici ◽  
P. Niessen ◽  
J.J. Byerley
Keyword(s):  
Grain Boundaries ◽  
Direct Measurement ◽  
Solute Segregation ◽  
Non Equilibrium

Gettering of Dissolved and Segregated Impurities in Multicrystalline Silicon Wafers

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Stemmer ◽  
I. Perichaud ◽  
S. MartiNuzzi
Keyword(s):  
Grain Boundaries ◽  
Light Beam ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Extended Defects ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
Cast Ingot ◽  
Crystallographic Defects ◽  
Homogeneous Regions

ABSTRACTPhosphorus gettering by diffusion from a POCl3 source was applied to matched wafers cut out of the same region of a cast ingot. Light Beam Induced Current mappings with wavelengths in the range between 840 and 980 nm lead to follow the variation of minority carrier diffusion length after gettering at 900°C for 120 and 240 mn, especially near extended crystallographic defects like dislocations and grain boundaries.The mappings show that after the gettering treatments, the local values of L increase due to the reduction of the recombination strength of extended defects and to the improvement of the homogeneous regions of the grains.As SIMS analyses indicate that Fe, Cu and Ni atoms are gettered, it is reasonable to assume that these impurities were initially dissolved in the grains and also segregated at the extended defects.

Direct Measurement of Electron Emission from Defect States at Silicon Grain Boundaries

1980 ◽  
Vol 44 (20) ◽  
pp. 1365-1365
Author(s):  
C. H. Seager ◽  
G. E. Pike ◽  
D. S. Ginley
Keyword(s):  
Grain Boundaries ◽  
Direct Measurement ◽  
Electron Emission ◽  
Defect States
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