scholarly journals LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS

1991 ◽  
Vol 02 (C2) ◽  
pp. C2-787-C2-794
Author(s):  
R. KIRCHER ◽  
M. FURUNO ◽  
J. MUROTA ◽  
S. ONO
Keyword(s):  
Low Temperature ◽  
Silicon Films ◽  
Low Temperature Epitaxy

Very Low Temperature Epitaxy of Heavily In-situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

2016 ◽  
Vol 75 (8) ◽  
pp. 387-398 ◽  
Author(s):  
J. Aubin ◽  
J.-M. Hartmann ◽  
J.-P. Barnes ◽  
J.-B. Pin ◽  
M. Bauer
Keyword(s):  
Low Temperature ◽  
Low Temperature Epitaxy ◽  
Very Low Temperature

Formation mechanism and properties of CdSe quantum dots on ZnSe by low temperature epitaxy and in situ annealing

2006 ◽  
Vol 89 (4) ◽  
pp. 043102 ◽  
Author(s):  
S. Mahapatra ◽  
T. Kiessling ◽  
E. Margapoti ◽  
G. V. Astakhov ◽  
W. Ossau ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Formation Mechanism ◽  
Cdse Quantum Dots ◽  
Low Temperature Epitaxy

Very Low Temperature Epitaxy of Heavily In Situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

2016 ◽  
Vol 6 (1) ◽  
pp. P21-P26 ◽  
Author(s):  
J. Aubin ◽  
J. M. Hartmann ◽  
J. P. Barnes ◽  
J. B. Pin ◽  
M. Bauer
Keyword(s):  
Low Temperature ◽  
Low Temperature Epitaxy ◽  
Very Low Temperature

scholarly journals CdSe/ZnSe Quantum Dots Formed by Low Temperature Epitaxy and In-Situ Annealing: Properties and Growth Optimization

2005 ◽  
Vol 108 (5) ◽  
pp. 769-776 ◽  
Author(s):  
S. Mahapatra ◽  
C. Schumacher ◽  
T. Kiessling ◽  
G.V. Astakhov ◽  
U. Bass ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Growth Optimization ◽  
Low Temperature Epitaxy

Low-temperature epitaxial growth of in-situ doped silicon films

1991 ◽  
Vol 115 (1-4) ◽  
pp. 439-442 ◽  
Author(s):  
Roland Kircher ◽  
Makoto Furuno ◽  
Junichi Murota ◽  
Shoichi Ono
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Films ◽  
Doped Silicon

Low-temperature growth of in situ phosphorus-doped silicon films: two-step growth utilizing amorphous silicon buffers

2000 ◽  
Vol 369 (1-2) ◽  
pp. 185-188
Author(s):  
Kyu-Hwan Shim ◽  
Hong-Seung Kim ◽  
Jeong-Yong Lee ◽  
Jin-Yeoung Kang ◽  
Min Kyu Song
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Films ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Doped Silicon ◽  
Step Growth ◽  
Phosphorus Doped

In situ Tensile Experiments at Low Temperatures on Niobium Single Crystals by H.V.E.M.

1975 ◽  
Vol 33 ◽  
pp. 58-59
Author(s):  
F. H. Louchet ◽  
L. P. Kubin
Keyword(s):  
Electron Microscope ◽  
Transition Temperature ◽  
Low Temperature ◽  
Slip System ◽  
Low Temperatures ◽  
Tensile Axis ◽  
Image Intensifier ◽  
Screw Dislocations ◽  
Source Operation

Experiments have been carried out on the 3 MeV electron microscope in Toulouse. The low temperature straining holder has been previously described Images given by an image intensifier are recorded on magnetic tape.The microtensile niobium samples are cut in a plane with the two operative slip directions [111] and lying in the foil plane. The tensile axis is near [011].Our results concern:- The transition temperature of niobium near 220 K: at this temperature and below an increasing difference appears between the mobilities of the screw and edge portions of dislocations loops. Source operation and interactions between screw dislocations of different slip system have been recorded.

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин
Keyword(s):  
Crystal Structure ◽  
Growth Rate ◽  
Low Temperature ◽  
Surface Morphology ◽  
Single Crystal ◽  
Root Mean Square Roughness ◽  
Rate Variation ◽  
Mean Square ◽  
Nucleation Layer ◽  
Low Temperature Epitaxy

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

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