scholarly journals Microstructure of Pyramidal Defects in InSb Layers Grown by Atomic Layer Molecular Beam Epitaxy on InP Substrates

1997 ◽  
Vol 7 (12) ◽  
pp. 2317-2324 ◽  
Author(s):  
J. C. Ferrer ◽  
F. Peiró ◽  
A. Cornet ◽  
J. R. Morante ◽  
T. Utzmeier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Inp Substrates

Effect of the Introduction of a MBE Buffer Layer on the Morphology of InSb Almbe Layers Grown on InP Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
J.C. Ferrer ◽  
A. Cornet ◽  
F. Peiró ◽  
J.R. Morante ◽  
T. Utzmeier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Dislocation Network ◽  
Threading Dislocation ◽  
Large Lattice Mismatch ◽  
Inp Substrates

ABSTRACTIn this paper we report on the morphology of InSb layers grown by atomic layer molecular beam epitaxy (ALMBE) onto InP substrates at low temperatures (330<T<400°C), comparing the nature and densities of defects with those found in ALMBE InSb films grown over InSb/InP buffer layers grown by molecular beam epitaxy (MBE). The main types of defects for ALMBE direct layers are threading dislocations and stacking faults with similar defect densities along both á110ñ directions. The inclusion of the intermediate InSb/InP MBE grown buffer layers leads to lower threading dislocation densities but higher and anisotropic stacking fault distribution. Moreover, different types of three-dimensional defects appear, which are associated with pyramidal or truncated pyramidal hillocks on the surface. These defects, consisting in twins associations are originated at the InSb/InP MBE interface and they are induced by an anomalous growth of InSb layers. In all the cases, the strain caused by the large lattice mismatch is accommodated by means of a pure edge-type misfit dislocation network placed at the interface.

Morphology evolution of InSb island grown on InP substrates by atomic layer molecular beam epitaxy

1998 ◽  
Vol 43-44 ◽  
pp. 51-57 ◽  
Author(s):  
J.C Ferrer ◽  
F Peiró ◽  
A Cornet ◽  
J.R Morante ◽  
T Utzmeier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Morphology Evolution ◽  
Inp Substrates

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

2004 ◽  
Vol 269 (2-4) ◽  
pp. 181-186 ◽  
Author(s):  
G.X. Shi ◽  
P. Jin ◽  
B. Xu ◽  
C.M. Li ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Annealing Effect

Comparison of morphology of CdTe/CdMnTe interfaces in heterostructures grown by molecular beam epitaxy in a standard and atomic layer modes

1998 ◽  
Vol 72 (9) ◽  
pp. 1104-1106 ◽  
Author(s):  
M. Godlewski ◽  
T. Wojtowicz ◽  
G. Karczewski ◽  
J. Kossut ◽  
J. P. Bergman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level

Deep levels in GaAs grown by atomic layer molecular beam epitaxy

1994 ◽  
Vol 65 (22) ◽  
pp. 2848-2850 ◽  
Author(s):  
E. Gombia ◽  
R. Mosca ◽  
A. Bosacchi ◽  
M. Madellaf ◽  
S. Franchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Deep Levels
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