Systematic Study of the (ET)2I3 Reticulate Doped Polycarbonate Film: Structure, ESR, Transport Properties and Superconductivity

1997 ◽  
Vol 7 (12) ◽  
pp. 1665-1675 ◽  
Author(s):  
E. Laukhina ◽  
J. Ulanski ◽  
A. Khomenko ◽  
S. Pesotskii ◽  
V. Tkachev ◽  
...  
Keyword(s):  
Transport Properties ◽  
Systematic Study ◽  
Film Structure ◽  
Polycarbonate Film

scholarly journals Antisite disorder and phase segregation in Mn2NiSn

2022 ◽  
Author(s):  
Samiksha Malik ◽  
Elaine T Dias ◽  
Arun Kumar Nigam ◽  
Kaustubh R Priolkar
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Systematic Study ◽  
Local Structure ◽  
Phase Segregation ◽  
Structural Defects ◽  
Antisite Disorder

Abstract A systematic study of crystal structure, local structure, magnetic and transport properties in quenched and temper annealed Ni2−xMn1+xSn alloys indicate the formation of Mn3Sn type structural defects caused by an antisite disorder between Mn and Sn occupying the Y and Z sublattices of X2YZ Heusler structure. The antisite disorder is caused by the substitution of Ni by Mn at the X sites. On temper annealing, these defects segregate and phase separate into L21 Heusler and D019 Mn3Sn type phases.

A systematic study on physicochemical and transport properties of imidazolium-based ionic liquids with γ -butyrolactone

2018 ◽  
Vol 116 ◽  
pp. 330-340 ◽  
Author(s):  
Snežana Papović ◽  
Slobodan Gadžurić ◽  
Marija Bešter-Rogač ◽  
Branislav Jović ◽  
Milan Vraneš
Keyword(s):  
Ionic Liquids ◽  
Transport Properties ◽  
Systematic Study

scholarly journals Engineered Microstructures and Transport Properties in YBCO Coated Conductors

2001 ◽  
Vol 689 ◽  
Author(s):  
T. G. Holesinger ◽  
B. J. Gibbons ◽  
J. Y. Coulter ◽  
S. R. Foltyn ◽  
J. R. Groves ◽  
...  
Keyword(s):  
Transport Properties ◽  
Buffer Layer ◽  
Critical Current ◽  
Film Structure ◽  
Coated Conductors ◽  
Superconducting Film ◽  
Coated Conductor ◽  
Layer Material ◽  
Current Densities ◽  
Ybco Coated Conductors

ABSTRACTEach process used to deposit or make the bi-axially textured template, buffer layer(s), and the superconductor in a coated conductor creates interfaces along which defects or interfacial reactions may result. These defects can be additive and propagate through the entire film structure to affect the growth and properties of the superconducting film. Defects within the films and their corresponding transport properties have been correlated with the differences in the thickness of the underlying buffer layer material. This knowledge can be used to control and engineer the structure of the coated conductor to maximize critical current densities.

Sputter Deposition of Indium Nitride on The (111) Face of Elemental and Compound Semiconductors

1990 ◽  
Vol 202 ◽  
Author(s):  
J. S. Morgan ◽  
T. J. Kistenmacher ◽  
W. A. Bryden ◽  
S. A. Ecelberger
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Indium Nitride ◽  
Rf Magnetron Sputtering ◽  
Film Structure ◽  
Electrical Mobility ◽  
Electrical Transport Properties ◽  
Structure Morphology ◽  
Structural Coherence

ABSTRACTThe structure, morphology, and transport properties of thin films of InN grown on several cubic semiconductors has been studied as a function of substrate temperature. Films were deposited using rf-magnetron sputtering onto the (111) face of GaAs, Ge, Si and ZrO2. In general, the film structure is such that (00.1)InN parallels the (111) plane of the cubic substrate above some deposition temperature. The in-plane structural coherence duplicates the magnitude of the calculated lattice mismatch between InN and the substrate. Electrical transport properties for growth onto (111) ZrO2 were characterized by n-type carrier concentration and mobilities ranging up to 44 cm2 /Vsec. A morphology-induced decrease in electrical mobility is observed for deposition temperatures above 350°C, as shown by SEM.

scholarly journals Effect of interfacial defects on the electronic properties of MoS2 based lateral T–H heterophase junctions

RSC Advances ◽  
2021 ◽  
Vol 11 (60) ◽  
pp. 37995-38002
Author(s):  
Mohammad Bahmani ◽  
Mahdi Ghorbani-Asl ◽  
Thomas Frauenheim
Keyword(s):  
Transport Properties ◽  
Electronic Properties ◽  
Systematic Study ◽  
Interfacial Defects

Our systematic study shows significant improvement in transport properties of MoS2-based lateral T–H heterophase junctions when interfacial defects are present.

scholarly journals Systematic study on transport properties of FeSe thin films with various degrees of strain

2018 ◽  
Vol 57 (12) ◽  
pp. 120314 ◽  
Author(s):  
Fuyuki Nabeshima ◽  
Masataka Kawai ◽  
Tomoya Ishikawa ◽  
Naoki Shikama ◽  
Atsutaka Maeda
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Systematic Study

scholarly journals Intrinsic asymmetric ferroelectricity induced giant electroresistance in ZnO/BaTiO3 superlattice

RSC Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 2353-2358
Author(s):  
Ye Yuan ◽  
Yue-Wen Fang ◽  
Yi-Feng Zhao ◽  
Chun-Gang Duan
Keyword(s):  
Transport Properties ◽  
Systematic Study ◽  
Ferroelectric Behavior ◽  
Packed Structure ◽  
Hexagonal Closed Packed

We combine the piezoelectric wurtzite ZnO and the ferroelectric (111) BaTiO3 as a hexagonal closed-packed structure and report a systematic study on the ferroelectric behavior induced by the interface and the transport properties between electrodes.

scholarly journals Systematic Study of Oxygen Vacancy Tunable Transport Properties of Few‐Layer MoO 3− x Enabled by Vapor‐Based Synthesis

2017 ◽  
Vol 27 (17) ◽  
pp. 1605380 ◽  
Author(s):  
Eve D. Hanson ◽  
Luc Lajaunie ◽  
Shiqiang Hao ◽  
Benjamin D. Myers ◽  
Fengyuan Shi ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Transport Properties ◽  
Systematic Study

scholarly journals The Features of Phase Stability of GaN and AlN Films at Nanolevel

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 8
Author(s):  
Ilya V. Chepkasov ◽  
Sergey V. Erohin ◽  
Pavel B. Sorokin
Keyword(s):  
Phase Transition ◽  
Systematic Study ◽  
Phase Stability ◽  
First Principles ◽  
Film Structure ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Detailed Understanding ◽  
Thickness Increase ◽  
Optical And Electronic Properties

Recently, two-dimensional gallium and aluminum nitrides have triggered a vast interest in their tunable optical and electronic properties. Continuation of this research requires a detailed understanding of their atomic structure. Here, by using first-principles calculations we reported a systematic study of phase stability of 2D-GaN and 2D-AlN. We showed that the films undergo a phase transition from a graphene-like to a wurtzite structure with a thickness increase, whereas the early reported body-centered-tetragonal phase requires specific conditions for stabilization. Additionally, we studied how the functionalization of the surface can modify the film structure as exemplified by hydrogenation.

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