Détermination de la solubilité du tétrahydrothiophène (THT) liquide dans les principaux constituants du gaz naturel (CH4, CO2 et N2) au moyen d'un dispositif dynamique avec analyse chromatographique en ligne de la phase vapeur

1998 ◽  
Vol 95 (5) ◽  
pp. 927-946
Author(s):  
G. Ghanem ◽  
G. Tagand ◽  
H. Loiseleur ◽  
D. Ingrain ◽  
J. Jose
Keyword(s):  
1985 ◽  
Vol 63 (6) ◽  
pp. 732-735 ◽  
Author(s):  
M. Benzaquen ◽  
D. Walsh ◽  
J. Auclair

Lightly compensated epitactic n-type GaAs is obtained by metal-organic vapour-phase epitaxy (MOVPE) with free-carrier concentration in the low 1015 cm−3 range and with good uniformity of both thickness and impurity concentrations over a 2-in.-diameter area (1 in. = 2.54 cm). Detailed Hall-effect and photoluminescence measurements are reported. At temperatures below 8 K, the conductivity is governed by variable-range hopping, clearly indicating a band of localized donor states. At higher impurity concentrations, a metallic contribution to the conductivity suggests a buildup of extended states near the middle of this band. These results are consistent with the observed photoluminescence.


1986 ◽  
Vol 47 (C1) ◽  
pp. C1-197-C1-202
Author(s):  
S. LARTIGUE ◽  
D. CAZAJOUS ◽  
G. MALE
Keyword(s):  

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