scholarly journals DEPOTS CHIMIQUES EN PHASE VAPEUR DE CARBURE DE BORE SUR CARBURE DE TUNGSTENE FRITTE ET SUR ACIER

1986 ◽  
Vol 47 (C1) ◽  
pp. C1-197-C1-202
Author(s):  
S. LARTIGUE ◽  
D. CAZAJOUS ◽  
G. MALE
Keyword(s):  
1985 ◽  
Vol 63 (6) ◽  
pp. 732-735 ◽  
Author(s):  
M. Benzaquen ◽  
D. Walsh ◽  
J. Auclair

Lightly compensated epitactic n-type GaAs is obtained by metal-organic vapour-phase epitaxy (MOVPE) with free-carrier concentration in the low 1015 cm−3 range and with good uniformity of both thickness and impurity concentrations over a 2-in.-diameter area (1 in. = 2.54 cm). Detailed Hall-effect and photoluminescence measurements are reported. At temperatures below 8 K, the conductivity is governed by variable-range hopping, clearly indicating a band of localized donor states. At higher impurity concentrations, a metallic contribution to the conductivity suggests a buildup of extended states near the middle of this band. These results are consistent with the observed photoluminescence.


1977 ◽  
Vol 12 (2) ◽  
pp. 423-426 ◽  
Author(s):  
J. Mimila-Arroyo ◽  
A. Bouazzi ◽  
G. Cohen-Solal
Keyword(s):  

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