scholarly journals Measurement of the Actual Contact Area of Details by the Power of a Reflected Light Beam Directed to a Contact Surface Covered with a Film

2018 ◽  
Vol 22 ◽  
pp. 01014
Author(s):  
Arkadiy Titov ◽  
Anna Sandulyak ◽  
Mikhail Baharev ◽  
Alexander Sandulyak
Keyword(s):  
Thin Film ◽  
Contact Area ◽  
Contact Surface ◽  
Friction And Wear ◽  
Optical Scheme ◽  
Normal Loading ◽  
Reflected Light ◽  
Labor Consuming ◽  
Dust Surface

Measurement of the actual area of details contact is important for control of friction and wear of such details. For this purpose, in particular, on a surface of one of details of couple covered with the thinnest layer of lubricant the thin film of coal is putted. On the raised dust surface impose the second detail of couple and squeeze them the application of normal loading. Light spots of contact are measured by planimetry. Instead of direct (labor-consuming) measurement of a large number of the areas of spots of contacts it is expedient to use integrated determination of the actual area of details – on the power of the beam of light reflected from ledges of a contact surface. The optical scheme of the device is developed, the efficiency of which for implementation is shown. Measurement of the actual area of details contact is important for control of friction and wear of such details. For this purpose, in particular, on a surface of one of details of couple covered with the thinnest layer of lubricant the thin film of coal is putted. On the raised dust surface impose the second detail of couple and squeeze them the application of normal loading. Light spots of contact are measured by planimetry. Instead of direct (labor-consuming) measurement of a large number of the areas of spots of contacts it is expedient to use integrated determination of the actual area of details – on the power of the beam of light reflected from ledges of a contact surface. The optical scheme of the device is developed, the efficiency of which for implementation is shown.

scholarly journals On a Simplified Model for Numerical Simulation of Wear During Dry Rolling Contacts

2008 ◽  
Vol 131 (1) ◽  
Author(s):  
L. Chevalier ◽  
A. Eddhahak-Ouni ◽  
S. Cloupet
Keyword(s):  
Contact Area ◽  
Power Distribution ◽  
Contact Problems ◽  
Rolling Contact ◽  
Normal Loading ◽  
Fast Determination ◽  
Wear Process ◽  
Simplified Approach ◽  
Rolling Contacts

We deal with rolling contact between quasi-identical bodies. As normal and tangential problems are uncoupled in that case, the simplified approach to determine contact area and normal loading distribution for rolling contact problems is presented in Sec. 2. In Sec. 3, the solution of the tangential problem is used to update the rolling profiles and enables to follow the wear evolution versus time. The method used to solve the normal problem is called semi-Hertzian approach with diffusion. It allows fast determination of the contact area for non-Hertzian cases. The method is based on the geometrical indentation of bodies in contact: The contact area is found with correct dimensions but affected by some irregularities coming from the curvature’s discontinuity that may arise during a wear process. Diffusion between independent stripes smoothes the contact area and the pressure distribution. The tangential problem is also solved on each stripe of the contact area using an extension of the simplified approach developed by Kalker and called FASTSIM. At the end, this approach gives the dissipated power distribution in the contact during rolling and this power is related to wear by Archard’s law. This enables the profiles of the bodies to be updated and the evolution of the geometry to be followed.

scholarly journals A contact area function for Berkovich nanoindentation: Application to hardness determination of a TiHfCN thin film

2014 ◽  
Vol 558 ◽  
pp. 259-266 ◽  
Author(s):  
D. Chicot ◽  
M. Yetna N'Jock ◽  
E.S. Puchi-Cabrera ◽  
A. Iost ◽  
M.H. Staia ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Area ◽  
Area Function

Some early history of replica techniques for electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1076-1077
Author(s):  
Robert M. Fisher
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Optical Microscope ◽  
Early History ◽  
Bulk Materials ◽  
Thin Sections ◽  
Transmission Electron ◽  
Reflected Light ◽  
History Of ◽  
Electron Microscopes

By 1940, a half dozen or so commercial or home-built transmission electron microscopes were in use for studies of the ultrastructure of matter. These operated at 30-60 kV and most pioneering microscopists were preoccupied with their search for electron transparent substrates to support dispersions of particulates or bacteria for TEM examination and did not contemplate studies of bulk materials. Metallurgist H. Mahl and other physical scientists, accustomed to examining etched, deformed or machined specimens by reflected light in the optical microscope, were also highly motivated to capitalize on the superior resolution of the electron microscope. Mahl originated several methods of preparing thin oxide or lacquer impressions of surfaces that were transparent in his 50 kV TEM. The utility of replication was recognized immediately and many variations on the theme, including two-step negative-positive replicas, soon appeared. Intense development of replica techniques slowed after 1955 but important advances still occur. The availability of 100 kV instruments, advent of thin film methods for metals and ceramics and microtoming of thin sections for biological specimens largely eliminated any need to resort to replicas.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Problems in Thin-Film X-ray Quantification

1990 ◽  
Vol 48 (2) ◽  
pp. 458-459
Author(s):  
J N Chapman ◽  
W A P Nicholson
Keyword(s):  
Thin Film ◽  
Specimen Thickness ◽  
X Rays ◽  
Characteristic Peak ◽  
Local Composition ◽  
X Ray ◽  
Measured Ratio ◽  
Path Lengths ◽  
Composition Changes

Energy dispersive x-ray microanalysis (EDX) is widely used for the quantitative determination of local composition in thin film specimens. Extraction of quantitative data is usually accomplished by relating the ratio of the number of atoms of two species A and B in the volume excited by the electron beam (nA/nB) to the corresponding ratio of detected characteristic photons (NA/NB) through the use of a k-factor. This leads to an expression of the form nA/nB = kAB NA/NB where kAB is a measure of the relative efficiency with which x-rays are generated and detected from the two species.Errors in thin film x-ray quantification can arise from uncertainties in both NA/NB and kAB. In addition to the inevitable statistical errors, particularly severe problems arise in accurately determining the former if (i) mass loss occurs during spectrum acquisition so that the composition changes as irradiation proceeds, (ii) the characteristic peak from one of the minority components of interest is overlapped by the much larger peak from a majority component, (iii) the measured ratio varies significantly with specimen thickness as a result of electron channeling, or (iv) varying absorption corrections are required due to photons generated at different points having to traverse different path lengths through specimens of irregular and unknown topography on their way to the detector.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

Application of EDS Technique for OSP Film Thickness Measurement

2006 ◽  
Author(s):  
Prong Kongsubto ◽  
Sirarat Kongwudthiti
Keyword(s):  
Thin Film ◽  
Quantitative Analysis ◽  
Joint Strength ◽  
Critical Factor ◽  
Thickness Measurement ◽  
Ic Manufacturing ◽  
And Control ◽  
Film Thickness Measurement ◽  
Non Destructive

Abstract Organic solderability preservatives (OSPs) pad is one of the pad finishing technologies where Cu pad is coated with a thin film of an organic material to protect Cu from oxidation during storage and many processes in IC manufacturing. Thickness of OSP film is a critical factor that we have to consider and control in order to achieve desirable joint strength. Until now, no non-destructive technique has been proposed to measure OSP thickness on substrate. This paper reports about the development of EDS technique for estimating OSP thickness, starting with determination of the EDS parameter followed by establishing the correlation between C/Cu ratio and OSP thickness and, finally, evaluating the accuracy of the EDS technique for OSP thickness measurement. EDS quantitative analysis was proved that it can be utilized for OSP thickness estimation.

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