scholarly journals Quantum modeling of two-level photovoltaic systems

2017 ◽  
Vol 8 ◽  
pp. 85503 ◽  
Author(s):  
Tahereh Nemati Aram ◽  
Asghar Asgari ◽  
Matthias Ernzerhof ◽  
Pascal Quémerais ◽  
Didier Mayou
Keyword(s):  
Electronic Structure ◽  
Charge Separation ◽  
Photovoltaic Cells ◽  
Localized States ◽  
Detailed Knowledge ◽  
Photovoltaic Systems ◽  
Quantum Formalism ◽  
Energy Domain ◽  
Quantum Modeling ◽  
Absorption Event

We present a quantum formalism that provides a quantitative picture of the fundamental processes of charge separation that follow an absorption event. We apply the formalism to two-level photovoltaic cells and our purpose is to pedagogically explain the main aspects of the model. The formalism is developed in the energy domain and provides detailed knowledge about existence or absence of localized states and their effects on electronic structure and photovoltaic yield.

Electronic Structure Transformation in a Magnetized Topological Semimetal

2021 ◽  
Vol 1 ◽  
Keyword(s):  
Electronic Structure ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Localized States ◽  
Structure Transformation ◽  
Nodal Lines ◽  
Topological Semimetal ◽  
Magnetic Domain Walls ◽  
Magnetic Orders ◽  
Topological Semimetals

We theoretically show that the nodal structures in topological semimetals, including Weyl points and nodal lines, can be switched by magnetic orders, accompanied by localized states at magnetic domain walls.

Luminescent Amorphous Silicon Layers

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Blue Shift ◽  
Localized States ◽  
Structure Model ◽  
Radiative Recombination Rate ◽  
Tight Binding Approximation

AbstractThe electronic structure of amorphous silicon layers has been calculated within the empirical tight binding approximation using the Wooten-Winer-Weaire atomic structure model. We predict an important blue shift due to the confinement for layer thickness below 3 nm and we compare with crystalline silicon layers. The radiative recombination rate is enhanced by the disorder and the confinement but remains quite small. The comparison of our results with experimental results shows that the density of defects and localized states in the studied samples must be quite small.

The electronic structure and spin-charge separation of one-dimensional SrCuO2

2019 ◽  
Vol 33 (02) ◽  
pp. 1950006
Author(s):  
Huaisong Zhao ◽  
Jiasheng Qian ◽  
Sheng Xu ◽  
Feng Yuan
Keyword(s):  
Electronic Structure ◽  
Charge Separation ◽  
Energy Region ◽  
Doping Concentration ◽  
High Energy ◽  
Intermediate Energy ◽  
Low Energy ◽  
One Dimensional ◽  
High Energy Peak ◽  
Energy Peak

Based on the t-J model and slave-boson theory, we have studied the electronic structure in one-dimensional SrCuO2 by calculating the electron spectrum. Our results show that the electron spectra are mainly composed of three parts in one-dimensional SrCuO2, a sharp low-energy peak, a broad intermediate-energy peak and a high-energy peak. The sharp low-energy peak corresponds to the main band (MB) while the broad intermediate-energy peak and high-energy peak are associated with the shadow band (SB) and high-energy band (HB), respectively. From low-energy to intermediate-energy region, a clear two-peak structure (MB and SB) around the momentum [Formula: see text] appears, and the distance between two peaks decreases along the momentum direction from [Formula: see text] to [Formula: see text], then disappears at the critical momentum point [Formula: see text], leaving a single peak above [Formula: see text]. The electron spectral function in one-dimensional SrCuO2 is also the doping and temperature dependent. In particular, in the very low doping concentration, the HB merges into the MB. However, with the increases of the doping concentration, the HB separates from the MB and moves quickly to the high-binding energy region. The HB and MB are the direct results of the spin-charge separation while SB is the result of strong interaction between charge and spin parts. Therefore, our theoretical result predicts that the HB is more likely to be found at the low doping concentration, and it will be drowned in the background when the doping concentration is larger. Then with the temperature increases, the magnitude of the SB decreases, and it disappears at high temperature.

scholarly journals The effect of Mo doping on the charge separation dynamics and photocurrent performance of BiVO4 photoanodes

2016 ◽  
Vol 18 (48) ◽  
pp. 32820-32825 ◽  
Author(s):  
Brian Pattengale ◽  
Jier Huang
Keyword(s):  
Electronic Structure ◽  
Charge Separation ◽  
Carrier Dynamics ◽  
Mo Doping

The effect of Mo doping on the electronic structure, carrier dynamics, and photocurrent performance of BiVO4 photoanodes was investigated.

Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si

2019 ◽  
Vol 21 (24) ◽  
pp. 13248-13257 ◽  
Author(s):  
Reza Vatan Meidanshahi ◽  
Stuart Bowden ◽  
Stephen M. Goodnick
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Localized States ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.

Electronic Structure of Amorphous Silicon

1997 ◽  
Vol 491 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Tight Binding ◽  
Localized States ◽  
Band Offset ◽  
Valence Band Offset ◽  
Tight Binding Approximation ◽  
Exponential Tails ◽  
Si Model ◽  
Hydrogenated Amorphous

ABSTRACTThe electronic structure of a continuous network model of tetrahedrally bonded amorphous silicon (a-Si) and of a model hydrogenated amorphous silicon (a-Si:H) that we have built from the a-Si model are calculated in the tight binding approximation. The band edges near the gap are characterized by exponential tails of localized states induced mainly by the variations in bond angles. The spatial localization of the states is compared between a-Si and a-Si:H. Valence band offset between the amorphous and the crystalline phases is calculated.

Does Electron Delocalization Influence Charge Separation at Donor–Acceptor Interfaces in Organic Photovoltaic Cells?

2018 ◽  
Vol 122 (38) ◽  
pp. 21792-21802 ◽  
Author(s):  
Frank-Julian Kahle ◽  
Christina Saller ◽  
Selina Olthof ◽  
Cheng Li ◽  
Jenny Lebert ◽  
...  
Keyword(s):  
Charge Separation ◽  
Photovoltaic Cells ◽  
Organic Photovoltaic ◽  
Electron Delocalization ◽  
Organic Photovoltaic Cells ◽  
Donor Acceptor

scholarly journals Quantum modeling of ultrafast photoinduced charge separation

2017 ◽  
Vol 30 (1) ◽  
pp. 013002 ◽  
Author(s):  
Carlo Andrea Rozzi ◽  
Filippo Troiani ◽  
Ivano Tavernelli
Keyword(s):  
Charge Separation ◽  
Photoinduced Charge Separation ◽  
Quantum Modeling ◽  
Photoinduced Charge
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