SiC Power Module Design: Performance, Robustness and Reliability

2021 ◽  
Keyword(s):  
Power Module ◽  
Design Performance ◽  
Module Design ◽  
Performance Robustness

Space High Voltage Power Module Design

2020 ◽  
Author(s):  
Zhao Wen-jie ◽  
Wan Cheng-an ◽  
Gao Yi-fei ◽  
Zhang Guo-shuai ◽  
Zheng Yan ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Module ◽  
Module Design

Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000289-000296 ◽  
Author(s):  
James D. Scofield ◽  
J. Neil Merrett ◽  
James Richmond ◽  
Anant Agarwal ◽  
Scott Leslie
Keyword(s):  
Selection Process ◽  
Free Module ◽  
Junction Temperature ◽  
Thermal Impedance ◽  
Power Module ◽  
Package Design ◽  
Module Design ◽  
Reliability Characteristics ◽  
Power Modules ◽  
Environmental Requirement

A custom multi-chip power module packaging was designed to exploit the electrical and thermal performance potential of silicon carbide MOSFETs and JBS diodes. The dual thermo-mechanical package design was based on an aggressive 200°C ambient environmental requirement and 1200 V blocking and 100 A conduction ratings. A novel baseplate-free module design minimizes thermal impedance and the associated device junction temperature rise. In addition, the design incorporates a free-floating substrate configuration to minimize thermal expansion coefficient induced stresses between the substrate and case. Details of the module design and materials selection process will be discussed in addition to highlighting deficiencies in current packaging materials technologies when attempting to achieve high thermal cycle life reliability over an extended temperature range.

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