Power switching devices

2011 ◽  
pp. 54-103
Keyword(s):  
Power Switching ◽  
Switching Devices

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1449-1452 ◽  
Author(s):  
Yang Sui ◽  
Ginger G. Walden ◽  
Xiao Kun Wang ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drift Region ◽  
Power Devices ◽  
Power Switching ◽  
Design Considerations ◽  
Blocking Voltage ◽  
Switching Devices

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

Ultra high voltage MOS controlled 4H-SiC power switching devices

2015 ◽  
Vol 30 (8) ◽  
pp. 084001 ◽  
Author(s):  
S Ryu ◽  
C Capell ◽  
E Van Brunt ◽  
C Jonas ◽  
M O’Loughlin ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Switching ◽  
Switching Devices ◽  
Ultra High Voltage

Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

2007 ◽  
Author(s):  
James A. Cooper ◽  
Michael A. Capano ◽  
Leonard C. Feldman ◽  
Marek Skowronski ◽  
John R. Williams
Keyword(s):  
High Performance ◽  
Power Switching ◽  
Switching Devices
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