Charge character in the double‐barrier quantum dots in well hybrid structure

2015 ◽  
Vol 10 (10) ◽  
pp. 533-536 ◽  
Author(s):  
Wenguo Ning ◽  
Weiwei Wang ◽  
Xiaobo Jin ◽  
Fangmin Guo ◽  
Fangyu Yue
2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
M. J. Wang ◽  
F. Y. Yue ◽  
F. M. Guo

The photodetector based on double barrier AlAs/GaAs/AlAs heterostructures and a layer self-assembled InAs quantum dots and In0.15Ga0.85As quantum well (QW) hybrid structure is demonstrated. The detection sensitivity and detection ability under weak illuminations have been proved. The dark current of the device can remain at 0.1 pA at 100 K, even lower to3.05×10-15 A, at bias of −1.35 V. Its current responsivity can reach about6.8×105 A/W when 1 pw 633 nm light power and −4 V bias are added. Meanwhile a peculiar amplitude quantum oscillation characteristic is observed in testing. A simple model is used to qualitatively describe. The results demonstrate that the InAs monolayer can effectively absorb photons and the double barrier hybrid structure with quantum dots in well can be used for low-light-level detection.


2018 ◽  
Vol 57 (4) ◽  
pp. 044001 ◽  
Author(s):  
Jiin Yu ◽  
Byung Jun Kim ◽  
Sungho Park ◽  
Il Ki Han ◽  
Seong Jun Kang

Nano Letters ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 5640-5645 ◽  
Author(s):  
Guanghui Cheng ◽  
Baikui Li ◽  
Chunyu Zhao ◽  
Xin Yan ◽  
Hong Wang ◽  
...  

2021 ◽  
pp. 1-1
Author(s):  
Yilin Sun ◽  
Zhifang Liu ◽  
Yingtao Ding ◽  
Zhiming Chen

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