scholarly journals Resistance switching and conduction mechanism on ferroelectric copolymer thin film device

2021 ◽  
Author(s):  
Xue Qin ◽  
Xia Xiao ◽  
Shu‐Chao Qin ◽  
Rui‐Xin Dong ◽  
Xun‐Ling Yan
Keyword(s):  
Thin Film ◽  
Conduction Mechanism ◽  
Resistance Switching ◽  
Thin Film Device

Influence of Shape Change Caused by Warp of Thin-film Device on Solar Radiation Pressure Torque in Solar Sail

2020 ◽  
Vol 19 (0) ◽  
pp. 101-110
Author(s):  
Rikushi KATO ◽  
Masanori MATSUSHITA ◽  
Hideyuki TAKAHASHI ◽  
Osamu MORI ◽  
Nobukatsu OKUIZUMI ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Radiation ◽  
Radiation Pressure ◽  
Shape Change ◽  
Solar Radiation Pressure ◽  
Solar Sail ◽  
Thin Film Device

Effect of Curved Thin-film Device on Natural Frequency of Rectangle Membrane under Uniaxial Tension

2019 ◽  
Vol 18 (0) ◽  
pp. 73-80 ◽  
Author(s):  
Masanori MATSUSHITA ◽  
Nobukatsu OKUIZUMI ◽  
Yasutaka SATOU ◽  
Osamu MORI ◽  
Takashi IWASA ◽  
...  
Keyword(s):  
Thin Film ◽  
Uniaxial Tension ◽  
Natural Frequency ◽  
Thin Film Device

Magnetoresistance effect of Ga-Sn-O thin-film device

2016 ◽  
Author(s):  
Asuka Fukawa ◽  
Kota Imanishi ◽  
Shogo Miyamura ◽  
Tokiyoshi Matsuda ◽  
Mutsumi Kimura
Keyword(s):  
Thin Film ◽  
Magnetoresistance Effect ◽  
Thin Film Device

scholarly journals Unidirectional and sustained delivery of the proresolving lipid mediator resolvin D1 from a biodegradable thin film device

2016 ◽  
Vol 105 (1) ◽  
pp. 31-41 ◽  
Author(s):  
Kevin D. Lance ◽  
Anuran Chatterjee ◽  
Bian Wu ◽  
Giorgio Mottola ◽  
Harald Nuhn ◽  
...  
Keyword(s):  
Thin Film ◽  
Lipid Mediator ◽  
Sustained Delivery ◽  
Resolvin D1 ◽  
Thin Film Device

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

Conduction mechanism of resistance switching in fully transparent MgO-based memory devices

2013 ◽  
Vol 114 (13) ◽  
pp. 134301 ◽  
Author(s):  
Ting Zhang ◽  
Jiang Yin ◽  
Yidong Xia ◽  
Weifeng Zhang ◽  
Zhiguo Liu
Keyword(s):  
Conduction Mechanism ◽  
Resistance Switching ◽  
Memory Devices ◽  
Mechanism Of Resistance
Sign in / Sign up

Export Citation Format

Share Document