scholarly journals Novel pure‐metal tri‐axis CMOS‐MEMS accelerometer design and implementation

2021 ◽  
Author(s):  
Jung‐Hung Wen ◽  
Weileum Fang
Keyword(s):  
Pure Metal ◽  
Mems Accelerometer ◽  
Design And Implementation ◽  
Cmos Mems

A CMOS-MEMS Accelerometer with U-channel Suspended Gate SOI FET

2021 ◽  
pp. 1-1
Author(s):  
Pramod Martha ◽  
Naveen Kadayinti ◽  
V. Seena
Keyword(s):  
Mems Accelerometer ◽  
Cmos Mems

A Novel CMOS MEMS Accelerometer with Four Sensing Finger Arrays

2006 ◽  
Author(s):  
Chih-Mimg Sun ◽  
Chuan-Wei Wang ◽  
Dong Hang Liu ◽  
M.S.-C. Lu ◽  
Weileun Fang ◽  
...  
Keyword(s):  
Mems Accelerometer ◽  
Cmos Mems

scholarly journals A Robust Fully-Integrated Digital-Output Inductive CMOS-MEMS Accelerometer with Improved Inductor Quality Factor

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 792
Author(s):  
Chiu ◽  
Liu ◽  
Hong
Keyword(s):  
Quality Factor ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Devices ◽  
Digital Output ◽  
Detection Scheme ◽  
Mems Accelerometer ◽  
Analog To Digital Conversion ◽  
Cmos Mems ◽  
In Series

This paper presents the design, fabrication, and characterization of an inductive complementary metal oxide semiconductor micro-electromechanical systems (CMOS-MEMS) accelerometer with on-chip digital output based on LC oscillators. While most MEMS accelerometers employ capacitive detection schemes, the proposed inductive detection scheme is less susceptible to the stress-induced structural curling and deformation that are commonly seen in CMOS-MEMS devices. Oscillator-based frequency readout does not need analog to digital conversion and thus can simplify the overall system design. In this paper, a high-Q CMOS inductor was connected in series with the low-Q MEMS sensing inductor to improve its quality factor. Measurement results showed the proposed device had an offset frequency of 85.5 MHz, sensitivity of 41.6 kHz/g, noise floor of 8.2 mg/Hz, bias instability of 0.94 kHz (11 ppm) at an average time of 2.16 s, and nonlinearity of 1.5% full-scale.

A sub-1G CMOS-MEMS accelerometer

2015 ◽  
Author(s):  
Daisuke Yamane ◽  
Toshifumi Konishi ◽  
Motohiro Takayasu ◽  
Hiroyuki Ito ◽  
Shiro Dosho ◽  
...  
Keyword(s):  
Mems Accelerometer ◽  
Cmos Mems

scholarly journals Implementation of a CMOS/MEMS Accelerometer with ASIC Processes

Micromachines ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 50 ◽  
Author(s):  
Yu-Sian Liu ◽  
Kuei-Ann Wen
Keyword(s):  
Integrated Circuit ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Accelerometer ◽  
Cmos Mems ◽  
Application Specific Integrated Circuit ◽  
Micro Electromechanical System ◽  
Application Specific ◽  
Mems Process

This paper presents the design, simulation and mechanical characterization of a newly proposed complementary metal-oxide semiconductor (CMOS)/micro-electromechanical system (MEMS) accelerometer. The monolithic CMOS/MEMS accelerometer was fabricated using the 0.18 μm application-specific integrated circuit (ASIC)-compatible CMOS/MEMS process. An approximate analytical model for the spring design is presented. The experiments showed that the resonant frequency of the proposed tri-axis accelerometer was around 5.35 kHz for out-plane vibration. The tri-axis accelerometer had an area of 1096 μm × 1256 μm.

Validation of a CMOS-MEMS accelerometer based on FGMOS transduction by electromechanical modification of its coupling coefficient

2019 ◽  
Vol 25 (11) ◽  
pp. 4163-4171
Author(s):  
G. S. Abarca-Jiménez ◽  
J. Mares-Carreño ◽  
M. A. Reyes-Barranca ◽  
B. Granados-Rojas ◽  
S. Mendoza-Acevedo ◽  
...  
Keyword(s):  
Coupling Coefficient ◽  
Mems Accelerometer ◽  
Cmos Mems
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