scholarly journals Effect of atomic layer deposited ultra‐thin SiO 2 layer on vapour‐liquid‐solid (VLS) grown high dielectric TiO 2 film for Si‐based MOS device applications

2021 ◽  
Vol 16 (1) ◽  
pp. 71-76
Author(s):  
Soham Lodh ◽  
Rajib Chakraborty ◽  
Anindita Das
Keyword(s):  
Atomic Layer ◽  
Device Applications ◽  
High Dielectric ◽  
Mos Device

scholarly journals Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuta Saito ◽  
Shogo Hatayama ◽  
Yi Shuang ◽  
Paul Fons ◽  
Alexander V. Kolobov ◽  
...  
Keyword(s):  
Chemical Bonding ◽  
Crystalline Phase ◽  
Three Dimensional ◽  
Atomic Layer ◽  
Unusual Behavior ◽  
Weakly Bound ◽  
Covalently Bonded ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Memory Applications

AbstractTwo-dimensional (2D) van der Waals (vdW) materials possess a crystal structure in which a covalently-bonded few atomic-layer motif forms a single unit with individual motifs being weakly bound to each other by vdW forces. Cr2Ge2Te6 is known as a 2D vdW ferromagnetic insulator as well as a potential phase change material for non-volatile memory applications. Here, we provide evidence for a dimensional transformation in the chemical bonding from a randomly bonded three-dimensional (3D) disordered amorphous phase to a 2D bonded vdW crystalline phase. A counterintuitive metastable “quasi-layered” state during crystallization that exhibits both “long-range order and short-range disorder” with respect to atomic alignment clearly distinguishes the system from conventional materials. This unusual behavior is thought to originate from the 2D nature of the crystalline phase. These observations provide insight into the crystallization mechanism of layered materials in general, and consequently, will be useful for the realization of 2D vdW material-based functional nanoelectronic device applications.

Integration of HfxTayN metal gate with SiO2 and HfOxNy gate dielectrics for MOS device applications

2007 ◽  
Vol 84 (12) ◽  
pp. 2916-2920 ◽  
Author(s):  
Chang-Ta Yang ◽  
Kuei-Shu Chang-Liao ◽  
Hsin-Chun Chang ◽  
B.S. Sahu ◽  
Tzu-Chen Wang ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Metal Gate ◽  
Device Applications ◽  
Mos Device

Construction of an atomic layer deposition system for nano-device applications

2006 ◽  
Vol 6 (2) ◽  
pp. 171-173 ◽  
Author(s):  
S.J. Noh ◽  
S.K. Lee ◽  
E.H. Kim ◽  
Y.J. Kong
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Device Applications

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas

2012 ◽  
Vol 516-517 ◽  
pp. 1945-1948
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Sheng Hsiung Yang ◽  
Jung Chan Lee ◽  
Chi Hsuan Cheng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Leakage Currents ◽  
Mos Capacitor ◽  
Native Oxides ◽  
Layer Deposition ◽  
High Dielectric ◽  
P Type

The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.

Suppressed charge trapping characteristics of (NH4)2Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric

2017 ◽  
Vol 178 ◽  
pp. 240-244 ◽  
Author(s):  
Hoon Hee Han ◽  
Donghwan Lim ◽  
Andrey Sokolov Sergeevich ◽  
Yu-Rim Jeon ◽  
Jae Ho Lee ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Mos Device

scholarly journals Structural, Electrical and Ferroelectric Properties of Lead-free Bi(Fe0.85dy0.15)o3 Electroceramic Compound

2021 ◽  
Author(s):  
L. Thansanga ◽  
Alok Shukla ◽  
Nitin Kumar ◽  
R.N.P. Choudhary
Keyword(s):  
Process Analysis ◽  
Ferroelectric Properties ◽  
Sample Surface ◽  
Electrical Measurement ◽  
Electric Polarization ◽  
Orthorhombic Symmetry ◽  
X Ray ◽  
Device Applications ◽  
High Dielectric ◽  
Scanning Electron

Abstract This paper mainly reports detailed studies of structural, dielectric, impedance and ferroelectric properties of Bi(Fe0.85Dy0.15)O3­ (termed as BFDO15), fabricated via solid state reaction (SSR) method. Analysis of X-ray diffraction (XRD) data confirm the crystal symmetry changes from rhombohedral to orthorhombic symmetry. The scanning electron micrograph collected through field emission scanning electron microscopy (FE-SEM) shows a regular distribution of grains over the sample surface. The elemental composition of the sample was examined by using energy dispersive X-ray micro-analysis (EDXMA) and this confirms the existence of constituent elements of the sample. The electrical measurement was carried out using a computer-controlled phase sensitive multimeter (PSM) in a frequency range of 1 kHz - 1000 kHz and temperature range of 25 ºC – 500 ºC. Study of dielectric properties shows high dielectric permittivity and small value of dielectric loss in the sample. The frequency dependent impedance and electrical modulus analysis reveals the presence of a semiconducting nature and non-Debye type relaxation process. Analysis of ac-conductivity with respect to frequency obeys the universal Jonscher’s power law. The electric polarization study shows enhancement in ferroelectric property of the material. Hence, based on the significant enhancement found in the structural, electrical and ferroelectric properties of BFDO15 material, it could be a promising candidate for modern device applications.

scholarly journals Atomic Layer Epitaxy and Device Applications.

Shinku ◽  
1992 ◽  
Vol 35 (5) ◽  
pp. 505-511
Author(s):  
Chiaki SASAOKA ◽  
Akira USUI
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Device Applications

scholarly journals High piezoelectricity after field cooling AC poling in temperature stable ternary single crystals manufactured by continuous-feeding Bridgman method

2021 ◽  
Vol 11 (1) ◽  
pp. 57-65
Author(s):  
Cong Luo ◽  
Tomoaki Karaki ◽  
Zhuangkai Wang ◽  
Yiqin Sun ◽  
Yohachi Yamashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Electromechanical Coupling ◽  
Piezoelectric Properties ◽  
Electromechanical Coupling Factor ◽  
Coupling Factor ◽  
Wide Range ◽  
Device Applications ◽  
Continuous Feeding ◽  
High Dielectric ◽  
Field Cooling

AbstractAfter field cooling (FC) alternating current poling (ACP), we investigated the dielectric and piezoelectric properties of [001]pc-oriented 0.24Pb(In1/2Nb1/2)O3 (PIN)-0.46Pb(Mg1/3Nb2/3)O3 (PMN)-0.30PbTiO3 (PT) (PIMN-0.30PT) single crystals (SCs), which were manufactured by continuous-feeding Bridgman (CF BM) within morphotropic phase boundary (MPB) region. By ACP with 4 kVrms/cm from 100 to 70 °C, the PIMN-0.30PT SC attained high dielectric permittivity (ε33T/ε0) of 8330, piezoelectric coefficient (d33) of 2750 pC/N, bar mode electromechanical coupling factor k33 of 0.96 with higher phase change temperature (Tpc) of 103 °C, and high Curie temperature (TC) of 180 °C. These values are the highest ever reported as PIMN-xPT SC system with Tpc > 100 °C. The enhancement of these properties is attributed to the induced low symmetry multi-phase supported by phase analysis. This work indicates that FC ACP is a smart and promising method to enhance piezoelectric properties of relaxor-PT ferroelectric SCs including PIMN-xPT, and provides a route to a wide range of piezoelectric device applications.

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