scholarly journals Atomic Layer Epitaxy and Device Applications.

Shinku ◽  
1992 ◽  
Vol 35 (5) ◽  
pp. 505-511
Author(s):  
Chiaki SASAOKA ◽  
Akira USUI
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Device Applications

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

scholarly journals Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuta Saito ◽  
Shogo Hatayama ◽  
Yi Shuang ◽  
Paul Fons ◽  
Alexander V. Kolobov ◽  
...  
Keyword(s):  
Chemical Bonding ◽  
Crystalline Phase ◽  
Three Dimensional ◽  
Atomic Layer ◽  
Unusual Behavior ◽  
Weakly Bound ◽  
Covalently Bonded ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Memory Applications

AbstractTwo-dimensional (2D) van der Waals (vdW) materials possess a crystal structure in which a covalently-bonded few atomic-layer motif forms a single unit with individual motifs being weakly bound to each other by vdW forces. Cr2Ge2Te6 is known as a 2D vdW ferromagnetic insulator as well as a potential phase change material for non-volatile memory applications. Here, we provide evidence for a dimensional transformation in the chemical bonding from a randomly bonded three-dimensional (3D) disordered amorphous phase to a 2D bonded vdW crystalline phase. A counterintuitive metastable “quasi-layered” state during crystallization that exhibits both “long-range order and short-range disorder” with respect to atomic alignment clearly distinguishes the system from conventional materials. This unusual behavior is thought to originate from the 2D nature of the crystalline phase. These observations provide insight into the crystallization mechanism of layered materials in general, and consequently, will be useful for the realization of 2D vdW material-based functional nanoelectronic device applications.

Steric hindrance effects in atomic layer epitaxy of InAs

1989 ◽  
Vol 55 (3) ◽  
pp. 244-246 ◽  
Author(s):  
Weon G. Jeong ◽  
E. P. Menu ◽  
P. D. Dapkus
Keyword(s):  
Steric Hindrance ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy

1994 ◽  
Vol 33 (Part 2, No. 9B) ◽  
pp. L1292-L1294 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masafumi Tanimoto ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Growth Processes ◽  
Force Microscopy ◽  
Atomic Force

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films
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