Optoelectronic properties of 2-D and 3-D-grown GaInNAs//GaAs QW light emitting diodes and laser diodes

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Vol 151 (5) ◽  
pp. 421-425 ◽  
Author(s):  
J.-M. Ulloa ◽  
E. Calleja ◽  
J.L. Sanchez-Rojas ◽  
J. Miguel-Sanchez ◽  
A. Hierro ◽  
...  
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Chan Beom Park ◽  
Yun Seop Shin ◽  
Yung Jin Yoon ◽  
Hyungsu Jang ◽  
Jung Geon Son ◽  
...  

Cs-based perovskite nanocrystals (PeNCs) have been considered to be superb emitters for perovskite light-emitting diodes (PeLEDs) due to their remarkable optoelectronic properties. Still, poor optical properties are mainly attributed to...


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Vol 34 (4) ◽  
pp. 711-719 ◽  
Author(s):  
Eduardo Foschini Miranda ◽  
Welton Alves Diniz ◽  
Marcos Vinicius Nogueira Gomes ◽  
Marcelo Ferreira Duarte de Oliveira ◽  
Paulo de Tarso Camillo de Carvalho ◽  
...  

2011 ◽  
Vol 40 (2) ◽  
pp. 190-193
Author(s):  
陈献文 CHEN Xian-wen ◽  
吴乾 WU Qian ◽  
李述体 LI Shu-ti ◽  
郑树文 ZHENG Shu-wen ◽  
何苗 HE Miao ◽  
...  

1993 ◽  
Vol 191 (1-2) ◽  
pp. 119-123 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
J.W. Cook ◽  
J.F. Schetzina

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 601
Author(s):  
Hieu P. T. Nguyen

Significant progress has been made in the development of nanophotonic devices and the use of nanostructured materials for optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, has recently attracted tremendous attention due to the fact of their unique geometry [...]


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