Low field operation of hot electron light emitting devices: quasi-flat-band model

2004 ◽  
Vol 151 (6) ◽  
pp. 482-485 ◽  
Author(s):  
J.Y. Wah ◽  
N. Balkan
Keyword(s):  
Flat Band ◽  
Band Model ◽  
Hot Electron ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Low Field ◽  
Field Operation

Synthesis, Characterization and Application of Thin Film Carbon Nanotube Material

2000 ◽  
Vol 633 ◽  
Author(s):  
Alexander N. Obraztsov ◽  
Alexander P. Volkov
Keyword(s):  
Thin Film ◽  
Multiwall Carbon Nanotubes ◽  
Film Surface ◽  
Chemical Vapor ◽  
Film Material ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Low Field ◽  
Predominant Orientation ◽  
Graphite Basal Plane

AbstractThe non-catalytical chemical vapor deposition (CVD) method was used to grow carbon thin film material consisting of plate-like nanosized graphite crystallites and multiwall carbon nanotubes with predominant orientation of both species by their crystallographic plane, corresponding to a graphite basal plane, along a normal to the film surface. A number of experimental techniques was used for examination and characterization of the film phase composition, morphology, and electron properties peculiarities. Low-field electron emission with highly density of emission sites and emission current was obtained for the film material and allow to demonstrate their applicability for sealed prototypes of light-emitting devices.

Experimental Studies and Physical Model of Efficient, Tunable Injection Using Tunnel-Transparent Dielectric Contacts on Polymer Light-Emitting Devices

2002 ◽  
Vol 734 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Alexander Shik
Keyword(s):  
Dielectric Layer ◽  
Negative Differential Resistance ◽  
Voltage Drop ◽  
Strong Dependence ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Hot Electron ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices

ABSTRACTMost conducting polymers used for light-emitting devices have a small electron affinity, creating a high barrier for electron injection resulting in low injection efficiency. To improve injection characteristics, we fabricated and investigated multi-layer contacts with a tunneltransparent dielectric layer of nanometer thickness. Polymer layers were prepared by spin coating, and dielectric and metallic contact layers subsequently grown by vacuum deposition. Samples with such multi-layer cathodes demonstrated a current-voltage characteristic with negative differential resistance. At larger applied voltage, electroluminescence was observed with an efficiency larger than for a simple cathode of the same metal. We have developed a model to describe double injection through multi-layer contacts which explains these salient observed features. The increase in injection efficiency is caused by the voltage drop at the dielectric layer, shifting the metal Fermi level relative to the polymer molecular orbitals responsible for carrier transport. The negative differential resistance is explained by the strong dependence of dielectric tunnel transparency on voltage, a dependence which is qualitatively different for electrons and holes. Further flexibility in the functional characteristics of the injecting contacts is achieved through the use of an additional thin metallic layer playing the role of a base electrode, similar to hot-electron transistors with metallic base.

Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices

2017 ◽  
Vol 183 ◽  
pp. 26-31 ◽  
Author(s):  
Y. Berencén ◽  
B. Mundet ◽  
J.A. Rodríguez ◽  
J. Montserrat ◽  
C. Domínguez ◽  
...  
Keyword(s):  
Hot Electron ◽  
Light Emitting ◽  
Light Emitting Devices

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  
Keyword(s):  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices

Probing local photophysical properties in perovskite based light-emitting devices

2019 ◽  
Author(s):  
Miguel Anaya ◽  
Kyle Frohna ◽  
Linsong Cui ◽  
Javad Shamsi ◽  
Sam Stranks
Keyword(s):  
Photophysical Properties ◽  
Light Emitting ◽  
Light Emitting Devices

Color Variable Bipolar/AC Light-Emitting Devices Based on Conjugated Polymers

1997 ◽  
Author(s):  
Y. Z. Wang ◽  
D. D. Gebler ◽  
D. K. Fu ◽  
T. M. Swager ◽  
A. J. Epstein
Keyword(s):  
Conjugated Polymers ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Exciton Coupling and Conformational Changes Impacting the Excited State Properties of Metal Organic Frameworks

Molecules ◽  
2020 ◽  
Vol 25 (18) ◽  
pp. 4230
Author(s):  
Andreas Windischbacher ◽  
Luca Steiner ◽  
Ritesh Haldar ◽  
Christof Wöll ◽  
Egbert Zojer ◽  
...  
Keyword(s):  
Conformational Changes ◽  
Photophysical Properties ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Red Shift ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Exciton Coupling ◽  
Metal Organic ◽  
Crystalline Metal

In recent years, the photophysical properties of crystalline metal-organic frameworks (MOFs) have become increasingly relevant for their potential application in light-emitting devices, photovoltaics, nonlinear optics and sensing. The availability of high-quality experimental data for such systems makes them ideally suited for a validation of quantum mechanical simulations, aiming at an in-depth atomistic understanding of photophysical phenomena. Here we present a computational DFT study of the absorption and emission characteristics of a Zn-based surface-anchored metal-organic framework (Zn-SURMOF-2) containing anthracenedibenzoic acid (ADB) as linker. Combining band-structure and cluster-based simulations on ADB chromophores in various conformations and aggregation states, we are able to provide a detailed explanation of the experimentally observed photophysical properties of Zn-ADB SURMOF-2: The unexpected (weak) red-shift of the absorption maxima upon incorporating ADB chromophores into SURMOF-2 can be explained by a combination of excitonic coupling effects with conformational changes of the chromophores already in their ground state. As far as the unusually large red-shift of the emission of Zn-ADB SURMOF-2 is concerned, based on our simulations, we attribute it to a modification of the exciton coupling compared to conventional H-aggregates, which results from a relative slip of the centers of neighboring chromophores upon incorporation in Zn-ADB SURMOF-2.

Cs0.05(FA0.85MA0.15)0.95Pb(I0.85Br0.15)3 based flexible perovskite light-emitting devices with excellent mechanical bending durability

2019 ◽  
Vol 723 ◽  
pp. 33-38 ◽  
Author(s):  
Minhuan Wang ◽  
Yulin Feng ◽  
Qingshun Dong ◽  
Jiming Bian ◽  
Chen Wang ◽  
...  
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Mechanical Bending
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