scholarly journals Temperature dependence of the threshold electric field in a hot electron VCSEL

2003 ◽  
Vol 150 (6) ◽  
pp. 535-540 ◽  
Author(s):  
A. Erol ◽  
J. Roberts ◽  
A. Serpengüzel ◽  
M.Ç. Arıkan ◽  
N. Balkan
2005 ◽  
Author(s):  
Ali Serpenguzel ◽  
Naci Balkan ◽  
Ayse Erol ◽  
M. Cetin Arikan ◽  
John Roberts

2007 ◽  
Vol 21 (19) ◽  
pp. 1239-1252 ◽  
Author(s):  
XIAO-FENG PANG ◽  
BO DENG ◽  
HUAI-WU ZHANG ◽  
YUAN-PING FENG

The temperature-dependence of proton electric conductivity in hydrogen-bonded molecular systems with damping effect was studied. The time-dependent velocity of proton and its mobility are determined from the Hamiltonian of a model system. The calculated mobility of (3.57–3.76) × 10-6 m 2/ Vs for uniform ice is in agreement with the experimental value of (1 - 10) × 10-2 m 2/ Vs . When the temperature and damping effects of the medium are considered, the mobility is found to depend on the temperature for various electric field values in the system, i.e. the mobility increases initially and reaches a maximum at about 191 K, but decreases subsequently to a minimum at approximately 241 K, and increases again in the range of 150–270 K. This behavior agrees with experimental data of ice.


1981 ◽  
Vol 9 (1-4) ◽  
pp. 293-296 ◽  
Author(s):  
W. Keppner ◽  
W. K�rner ◽  
P. Heubes ◽  
G. Schatz

1983 ◽  
Vol 15 (1-4) ◽  
pp. 283-287 ◽  
Author(s):  
M. H. Rafailovich ◽  
O. C. Kistner ◽  
E. Dafni ◽  
A. W. Sunyar ◽  
M. Mohsen ◽  
...  

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.


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