Comparison of light emission from room temperature light emitting diodes with InAs active regions grown by LPE

1997 ◽  
Vol 144 (5) ◽  
pp. 287-294 ◽  
Author(s):  
A. Krier ◽  
M. Fisher
Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 492 ◽  
Author(s):  
Ha Quoc Thang Bui ◽  
Ravi Teja Velpula ◽  
Barsha Jain ◽  
Omar Hamed Aref ◽  
Hoang-Duy Nguyen ◽  
...  

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.


2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2223-2225 ◽  
Author(s):  
Atsushi Koizumi ◽  
Yasufumi Fujiwara ◽  
Kentaro Inoue ◽  
Akira Urakami ◽  
Taketoshi Yoshikane ◽  
...  

2010 ◽  
Vol 22 (28) ◽  
pp. 3062-3066 ◽  
Author(s):  
Sang-Il Park ◽  
An-Phong Le ◽  
Jian Wu ◽  
Yonggang Huang ◽  
Xiuling Li ◽  
...  

2013 ◽  
Vol 103 (18) ◽  
pp. 183513 ◽  
Author(s):  
Parthiban Santhanam ◽  
Duanni Huang ◽  
Rajeev J. Ram ◽  
Maxim A. Remennyi ◽  
Boris A. Matveev

2000 ◽  
Vol 3 (5-6) ◽  
pp. 383-387 ◽  
Author(s):  
L Vescan ◽  
O Chretien ◽  
T Stoica ◽  
E Mateeva ◽  
A Mück

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