Channel waveguides formed in fused silica and silica-on-silicon by Si, P and Ge ion implantation

1996 ◽  
Vol 143 (5) ◽  
pp. 281-286 ◽  
Author(s):  
P.W. Leech ◽  
M. Ridgway ◽  
M. Faith
Keyword(s):  
Ion Implantation ◽  
Fused Silica ◽  
Channel Waveguides

Waveguides Fabricated in Fused Silica by Germanium Ion Implantation at Varying Doses

1995 ◽  
Vol 392 ◽  
Author(s):  
Patrick W. Leech ◽  
Mark C. Ridgway
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Single Mode ◽  
Fused Silica ◽  
Propagation Loss ◽  
Progressive Reduction ◽  
Intermediate Range ◽  
Nuclear Component ◽  
Order Of Magnitude ◽  
Channel Waveguides

AbstractThe implantation of MeV Ge3+ ions into fused silica has been used to fabricate single mode channel waveguides with a low propagation loss of 0.10–0.15 dB/cm. The loss coefficient, α, has been measured as a function of ion dose (8 × 1013 to 8 × 1016 ions/cm2) and annealing temperature (250 to 600 °C) at λ = 1300 nm. The value of cc for the as-implanted waveguides exhibited a minimum of -1.0 dB/cm at an intermediate range of dose from 8 × 1014 to 8 × 1015 ions/cm2. A progressive reduction in α occurred as the annealing temperature was increased from 300 to 500 °C. Annealing of the implanted waveguides at 500 °C for 1 h has produced an order of magnitude decrease in α to 0.1 dB/cm at 8 × 1014 ions/cm2. At doses which were outside of the intermediate range, the value of α was ≥ 10 dB/cm. This trend in α with ion dose has been attributed to the dominance of a residual nuclear component of damage after annealing.

Low loss channel waveguides fabricated in fused silica by germanium ion implantation

1995 ◽  
Vol 31 (15) ◽  
pp. 1238-1240 ◽  
Author(s):  
P.W. Leech ◽  
M.C. Ridgway ◽  
P.C. Kemeny
Keyword(s):  
Ion Implantation ◽  
Fused Silica ◽  
Low Loss ◽  
Channel Waveguides

Properties of Waveguide in Fused Silica and Quartz Crystal Fabricated by Cu2+ Ion Implantation

2017 ◽  
Vol 46 (4) ◽  
pp. 413001 ◽  
Author(s):  
刘秀红 LIU Xiu-hong ◽  
韩海燕 HAN Hai-yan ◽  
朱巧芬 ZHU Qiao-fen ◽  
黄艳宾 HUANG Yan-bin ◽  
董昭 DONG Zhao
Keyword(s):  
Ion Implantation ◽  
Quartz Crystal ◽  
Fused Silica

Physical and optical properties of Cu nanoclusters fabricated by ion implantation in fused silica

1994 ◽  
Vol 76 (2) ◽  
pp. 708-715 ◽  
Author(s):  
R. H. Magruder ◽  
R. F. Haglund ◽  
L. Yang ◽  
J. E. Wittig ◽  
R. A. Zuhr
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Fused Silica ◽  
Cu Nanoclusters

Some optical properties of waveguides made by high energy ion implantation in fused silica

1992 ◽  
Author(s):  
J. Albert ◽  
B. Malo ◽  
D. C. Johnson ◽  
K. O. Hill ◽  
J. L. Brebner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
High Energy ◽  
Fused Silica

Radiation Effects in Nonmetals: Amorphization, Phase Decomposition, and Nanoparticles

1998 ◽  
Vol 540 ◽  
Author(s):  
A. Meldrum ◽  
L.A. Boatner ◽  
C.W. White ◽  
D.O. Henderson
Keyword(s):  
Ion Implantation ◽  
Electron Irradiation ◽  
Radiation Effects ◽  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Semiconductor Nanocrystals ◽  
Heavy Ion ◽  
Fused Silica ◽  
Near Surface

AbstractRadiation effects in nonmetals have been studied for well over a century by geologists, mineralogists, physicists, and materials scientists. The present work focuses on recent results of investigations of the ion-beam-induced amorphization of the ABO4 compounds – including the orthophosphates (LnPO4; Ln = lanthanides) and the orthosilicates: zircon (ZrSiO4), hafnon (HfSiO4), and thorite (ThSiO4). In the case of the orthosilicates, heavy-ion irradiation at elevated temperatures causes the precipitation of a nanocrystalline metal oxide. Electron irradiation effects in these amorphized insulating ceramics can produce localized recrystallization on a nanometer scale. Similar electron irradiation techniques were used to nucleate monodispersed compound semiconductor nanocrystals formed by ion implantation of the elemental components into fused silica. Methods for the formation of novel structural relationships between embedded nanocrystals and their hosts have been developed and the results presented here demonstrate the general flexibility of ion implantation and irradiation techniques for producing unique near-surface microstructures in ion-implanted host materials.

Monomode optical planar and channel waveguides in Yb3+-doped silicate glasses formed by helium ion implantation

2013 ◽  
Vol 52 ◽  
pp. 10-14 ◽  
Author(s):  
Chun-Xiao Liu ◽  
Shu Cheng ◽  
Jin-Hua Zhao ◽  
Wei-Nan Li ◽  
Wei Wei ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicate Glasses ◽  
Helium Ion ◽  
Channel Waveguides
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