Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

2001 ◽  
Vol 148 (2) ◽  
pp. 71 ◽  
Author(s):  
T. Trajkovic ◽  
F. Udrea ◽  
P.R. Waind ◽  
J. Thomson ◽  
G.A.J. Amaratunga ◽  
...  
Keyword(s):  
Optimum Design ◽  
High Power ◽  
Next Generation ◽  
Power Switching ◽  
Switching Devices

Physics and Engineering of High Power Switching Devices

1977 ◽  
Vol 41 (2) ◽  
pp. 460-460
Author(s):  
A. Alberigi Quaranta
Keyword(s):  
High Power ◽  
Power Switching ◽  
Switching Devices

Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs

2008 ◽  
Vol 600-603 ◽  
pp. 1191-1194 ◽  
Author(s):  
Yang Sui ◽  
James A. Cooper ◽  
X. Wang ◽  
Ginger G. Walden
Keyword(s):  
High Voltage ◽  
Room Temperature ◽  
Next Generation ◽  
Power Switching ◽  
Drift Layer ◽  
The Ideal ◽  
Switching Devices

We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the drift layer. The maximum currents of the experimental p-channel IGBTs are 1.2x and 2.1x higher than the ideal 20 kV n-channel DMOSFETs at room temperature and 175°C, respectively.

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

2014 ◽  
Vol 778-780 ◽  
pp. 967-970 ◽  
Author(s):  
Donald A. Gajewski ◽  
Sei Hyung Ryu ◽  
Mrinal Das ◽  
Brett Hull ◽  
Jonathan Young ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Large Sample Size ◽  
Next Generation ◽  
Process Technology ◽  
Power Switching ◽  
Comprehensive Reliability ◽  
Reliability Performance ◽  
Acceptance Tests ◽  
Frequency Power

We present new reliability results on the Cree, Inc., 4H-SiC, DMOSFET devices. The Cree DMOSFETs were developed to meet the demand of next-generation, high-frequency power switching applications, such as: dc-ac inversion, dc-dc conversion, and ac-dc rectification, with continually improving energy efficiency. The Cree Generation 2 DMOSFET process technology is now commercially available with 1200 V and 1700 V ratings. We have performed intrinsic reliability studies to ensure excellent wear-out performance and long field lifetime of the products. We have also performed large sample size qualification reliability acceptance tests to ensure the quality of the manufacturing and packaging processes. These comprehensive reliability studies establish new benchmarks for wide bandgap transistors and demonstrate that Crees MOSFETs meet or exceed all industrial reliability requirements. This achievement facilitates broad market adoption of this disruptive power switch technology.

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