Design and performance of digital polysilicon thin-film-transistor circuits on glass

1994 ◽  
Vol 141 (1) ◽  
pp. 56 ◽  
Author(s):  
S.M. Fluxman
1999 ◽  
Vol 20 (6) ◽  
pp. 289-291 ◽  
Author(s):  
H. Klauk ◽  
D.J. Gundlach ◽  
T.N. Jackson

2020 ◽  
Vol 8 (25) ◽  
pp. 8521-8530 ◽  
Author(s):  
Nico Koslowski ◽  
Vanessa Trouillet ◽  
Jörg J. Schneider

Yttrium aluminium oxide (YAlxOy) dielectric is accessible using a molecular single-source precursor approach. Processing using deep UV leads to a functional amorphous dielectric with functionality in a thin-film transistor device.


2002 ◽  
Vol 715 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
J. Ho ◽  
Y. Wang ◽  
J. B. Boyce ◽  
...  

AbstractThe technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.


Author(s):  
Jie Sun ◽  
Devin Mourey ◽  
Dalong Zhao ◽  
Sungkyu Park ◽  
Shelby F. Nelson ◽  
...  

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