Design model for fully integrated high-performance linear CMOS power amplifiers

2011 ◽  
Vol 5 (7) ◽  
pp. 795
Author(s):  
H. Solar ◽  
G. Bistué ◽  
J. Legarda ◽  
E. Fernández ◽  
R. Berenguer
Keyword(s):  
Power Amplifiers ◽  
High Performance ◽  
Design Model ◽  
Fully Integrated

Design of high performance CMOS power amplifiers for 60 GHz applications

2015 ◽  
Author(s):  
A. Ghiotto ◽  
A. Larie ◽  
E. Kerherve ◽  
B. Leite ◽  
B. Martineau ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
High Performance ◽  
60 Ghz

Fully Integrated Organic Nanocrystal Diode as High Performance Room Temperature NO2Sensor

2016 ◽  
Vol 28 (15) ◽  
pp. 2971-2977 ◽  
Author(s):  
Abdur Rehman Jalil ◽  
Hao Chang ◽  
Vineeth Kumar Bandari ◽  
Peter Robaschik ◽  
Jian Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Fully Integrated

Fully-integrated multifunctional fast time to amplitude converter for high-performance timing applications

2021 ◽  
Author(s):  
Giulia Acconcia ◽  
Francesco Malanga ◽  
Ivan Labanca ◽  
Massimo Ghioni ◽  
Ivan Rech
Keyword(s):  
High Performance ◽  
Fast Time ◽  
Fully Integrated ◽  
Performance Timing

A reverse design model for high-performance and low-cost magnesium alloys by machine learning

2022 ◽  
Vol 201 ◽  
pp. 110881
Author(s):  
Xiaoxi Mi ◽  
Lianjuan Tian ◽  
Aitao Tang ◽  
Jing Kang ◽  
Peng Peng ◽  
...  
Keyword(s):  
Machine Learning ◽  
Magnesium Alloys ◽  
High Performance ◽  
Low Cost ◽  
Design Model

Package Voltage Regulators: The Answer for Power Management Challenges

2019 ◽  
Vol 2019 (1) ◽  
pp. 000438-000443 ◽  
Author(s):  
Joseph Meyer ◽  
Reza Moghimi ◽  
Noah Sturcken
Keyword(s):  
Integrated Circuit ◽  
High Performance ◽  
Power Conversion ◽  
Cmos Technology ◽  
Voltage Regulation ◽  
Voltage Regulators ◽  
Electronic Systems ◽  
Single Chip ◽  
Fully Integrated ◽  
Computational Performance

Abstract The generational scaling of CMOS device geometries, as predicted by Moore's law, has significantly outpaced advances in CMOS package and power electronics technology. The conduction of power to a high-performance integrated circuit (IC) die typically requires close to 50% of package and IC I/O and is increasing with trends towards lower supply voltages and higher power density that occur in advanced CMOS nodes. The disparity in scaling of logic, package, and I/O technology has created a significant bottleneck that has become a dominant constraint on computational performance. By performing power conversion and voltage regulation in-package, this limitation can be mitigated. Integration of thin-film ferromagnetic inductors with CMOS technology enables single-chip power converters to be co-packaged with processors, high bandwidth memory (HBM), and/or other modules. This paper highlights the advantages of fully integrated package voltage regulators (PVRs), which include: reducing package I/O allocated for power, eliminating the need for upstream power-conversion stages, and improving transient response. These benefits substantially reduce the size, weight, and power of modern electronic systems.

High-Performance MEMS Pressure Sensor Fully-Integrated with a 3-Axis Accelerometer

2019 ◽  
Author(s):  
Frederic Souchon ◽  
Loic Joet ◽  
Carine Ladner ◽  
Patrice Rey ◽  
Stephan Louwers
Keyword(s):  
Pressure Sensor ◽  
High Performance ◽  
Fully Integrated

scholarly journals Dual-band impedance transformation networks for integrated power amplifiers

2014 ◽  
Vol 8 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Robert Wolf ◽  
Niko Joram ◽  
Stefan Schumann ◽  
Frank Ellinger
Keyword(s):  
Output Power ◽  
Power Amplifiers ◽  
Design Procedure ◽  
Dual Band ◽  
Analysis Method ◽  
Large Signal ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Relative Bandwidth ◽  
Measurement Results

This paper shows that the two most common impedance transformation networks for power amplifiers (PAs) can be designed to achieve optimum transformation at two frequencies. Hence, a larger bandwidth for the required impedance transformation ratio is achieved. A design procedure is proposed, which takes imperfections like losses into account. Furthermore, an analysis method is presented to estimate the maximum uncompressed output power of a PA with respect to frequency. Based on these results, a fully integrated PA with a dual-band impedance transformation network is designed and its functionality is proven by large signal measurement results. The amplifier covers the frequency band from 450 MHz to 1.2 GHz (3 dB bandwidth of the output power and efficiency), corresponding to a relative bandwidth of more than 100%. It delivers 23.7 dBm output power in the 1 dB compression point, having a power-added efficiency of 33%.

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