MPGA: an evolutionary state assignment for dynamic and leakage power reduction in FSM synthesis

2018 ◽  
Vol 12 (3) ◽  
pp. 111-120 ◽  
Author(s):  
Yanyun Tao ◽  
Yuzhen Zhang ◽  
Qinyu Wang ◽  
Jian Cao
Keyword(s):  
Power Reduction ◽  
Leakage Power ◽  
State Assignment ◽  
Evolutionary State

LEAKAGE POWER REDUCTION USING MULTI MODAL DRIVEN HIERARCHICAL POWER MODE SWITCHES

2018 ◽  
Vol 6 (2) ◽  
pp. 1
Author(s):  
SEKHAR REDDY M. CHANDRA ◽  
REDDY P. RAMANA ◽  
◽  
Keyword(s):  
Power Reduction ◽  
Leakage Power ◽  
Power Mode

scholarly journals Exploring the limits of leakage power reduction in caches

2005 ◽  
Vol 2 (3) ◽  
pp. 221-246 ◽  
Author(s):  
Yan Meng ◽  
Timothy Sherwood ◽  
Ryan Kastner
Keyword(s):  
Power Reduction ◽  
Leakage Power

scholarly journals Comparative analysis of SRAM cell with leakage power reduction approaches

2018 ◽  
Vol 7 (2.7) ◽  
pp. 863
Author(s):  
Damarla Paradhasaradhi ◽  
Kollu Jaya Lakshmi ◽  
Yadavalli Harika ◽  
Busa Ravi Teja Sai ◽  
Golla Jayanth Krishna
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Low Voltage ◽  
Power Saving ◽  
Vital Role ◽  
Power Reduction ◽  
Leakage Power ◽  
Access Time ◽  
Chip Area ◽  
Sram Cell

In deep sub-micron technologies, high number of transistors is mounted onto a small chip area where, SRAM plays a vital role and is considered as a major part in many VLSI ICs because of its large density of storage and very less access time. Due to the demand of low power applications the design of low power and low voltage memory is a demanding task. In these memories majority of power dissipation depends on leakage power. This paper analyzes the basic 6T SRAM cell operation. Here two different leakage power reduction approaches are introduced to apply for basic 6T SRAM. The performance analysis of basic SRAM cell, SRAM cell using drowsy-cache approach and SRAM cell using clamping diode are designed at 130nm using Mentor Graphics IC Studio tool. The proposed SRAM cell using clamping diode proves to be a better power reduction technique in terms of power as compared with others SRAM structures. At 3.3V, power saving by the proposed SRAM cell is 20% less than associated to basic 6T SRAM Cell.

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