A New Power Combiner Using Aperture Coupling Technique for Push-pull Class B Power Amplifier

Author(s):  
F. Zubir ◽  
P. Gardner
2016 ◽  
Vol 63 (7) ◽  
pp. 618-622 ◽  
Author(s):  
Joonhoi Hur ◽  
Hyoungsoo Kim ◽  
Ockgoo Lee ◽  
Kwan-Woo Kim ◽  
Franklin Bien ◽  
...  

2020 ◽  
Vol 68 (3) ◽  
pp. 1022-1034 ◽  
Author(s):  
Mikko Martelius ◽  
Kari Stadius ◽  
Jerry Lemberg ◽  
Enrico Roverato ◽  
Tero Nieminen ◽  
...  

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1312 ◽  
Author(s):  
Chen Jin ◽  
Yuan Gao ◽  
Wei Chen ◽  
Jianhua Huang ◽  
Zhiyu Wang ◽  
...  

This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 μm GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51–59% PAE (Power Added Efficiency) and 19.8–21.2 dB power gain with a saturated power of 40.8–42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 × 2.4 mm2.


2019 ◽  
Vol 29 (3) ◽  
pp. 225-227 ◽  
Author(s):  
Yapei Chen ◽  
Yong Zhang ◽  
Yan Sun ◽  
Oupeng Li ◽  
Haiyan Lu ◽  
...  

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