scholarly journals Static dielectric constant and dielectric loss of cellulose insulation: Molecular dynamics simulations

High Voltage ◽  
2021 ◽  
Author(s):  
Wei Hou ◽  
Lijun Yang ◽  
Yang Mo ◽  
Fei Yin ◽  
Youyu Huang ◽  
...  
Author(s):  
Sari J. Laihonen ◽  
Joakim P.M. Jämbeck ◽  
Mikael Unge

<p>In order to influence properties of polymers, several different type of additives can be used. Often, time consuming experimental work is needed to assess performance and suitable concentrations for the chosen polymer-additive system. Therefore, it is preferable to be able to estimate the properties by means of theoretical work. In the present work, dielectric constant and loss for polypropylene-meso-erythritol compounds were studied. The experimental results were compared to the theoretically assessed properties.<br />The compounds were prepared in three different concentrations. The obtained samples were pressed to plates which were characterized by dielectric response<br />measurements. The dielectric constants were also assessed using Maxwell-Garnett estimation and molecular dynamics simulations. For the later, both<br />atomistic model and a more coarse multiscale model were used. The Maxwell-Garnett equation gave a good estimation of the dielectric constant level whereas with the molecular dynamics simulations the obtained dielectric constant were in exact accordance to the measured values. With the molecular dynamics simulation, also the loss could be estimated. As expected, the atomistic model gave better correlation to the measured loss levels than the multi-scale model.</p>


2011 ◽  
Vol 485 ◽  
pp. 287-290
Author(s):  
Munemasa Tomita ◽  
Kenji Tsuruta

Extra-long molecular-dynamics simulations are performed to study the interplay between dielectric properties and microstructures of silicon oxynitride. We quantitatively obtained the ionic permittivity and its linear dependence on nitrogen concentration. Analyses on microstructure of the oxynitride show that, as the N concentration increases, N atoms enter Si-O networks creating smaller-sized rings. While overall tendency of dielectric constant is monotonic increase on the N concentration, microscopic characteristics, such as local displacement of atoms, are strongly depend on local bonding environments.


2016 ◽  
Vol 219 ◽  
pp. 354-358 ◽  
Author(s):  
José G. Méndez-Bermúdez ◽  
Hector Dominguez ◽  
László Pusztai ◽  
Sándor Guba ◽  
Barnabás Horváth ◽  
...  

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