InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 [micro sign]m at room-temperature

2009 ◽  
Vol 45 (3) ◽  
pp. 165 ◽  
Author(s):  
A. Gassenq ◽  
G. Boissier ◽  
P. Grech ◽  
G. Narcy ◽  
A.N. Baranov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Super Lattice ◽  
Short Period

InAs Quantum Dots in AlAs/GaAs Short Period Superlattices: Structure, Optical Characteristics and Laser Diodes

2001 ◽  
Vol 707 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

ABSTRACTThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2x1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

2002 ◽  
Vol 81 (17) ◽  
pp. 3146-3148 ◽  
Author(s):  
J. G. Kim ◽  
L. Shterengas ◽  
R. U. Martinelli ◽  
G. L. Belenky ◽  
D. Z. Garbuzov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Continuous Waves

Single spatial mode room temperature operated 3.15 [micro sign]m diode lasers

2010 ◽  
Vol 46 (5) ◽  
pp. 367 ◽  
Author(s):  
J. Chen ◽  
T. Hosoda ◽  
G. Kipshidze ◽  
L. Shterengas ◽  
G. Belenky ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Spatial Mode

GaAs-based III–Ny–V1−yactive regions based on short-period super-lattice structures

2008 ◽  
Vol 23 (12) ◽  
pp. 125016 ◽  
Author(s):  
Yousef Seyed Jalili ◽  
Paul N Stavrinou ◽  
Gareth Parry
Keyword(s):  
Lattice Structures ◽  
Super Lattice ◽  
Short Period

The design of 1 eV band-gap of GaNAs/InGaAs short-period super-lattice solar cell

2013 ◽  
Vol 43 (8) ◽  
pp. 930-935
Author(s):  
Yu WEN ◽  
XinYuan GAN ◽  
NaiMing WANG ◽  
Hui YANG ◽  
XinHe ZHENG ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Super Lattice ◽  
Short Period

InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes

2001 ◽  
Vol 692 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

AbstractThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

Room-temperature diode lasers operating at 2.78 μm for enhanced CO 2 detection

1995 ◽  
Author(s):  
Pamela K. York ◽  
Dmitri Z. Garbuzov ◽  
Hao Lee ◽  
Ramon U. Martinelli ◽  
Raymond J. Menna ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diode Lasers
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