Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film

D. Lee; S. Baek; M. Ree; O. Kim

doi:10.1049/el:20080326

Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film

Electronics Letters ◽

10.1049/el:20080326 ◽

2008 ◽

Vol 44 (9) ◽

pp. 596 ◽

Cited By ~ 11

Author(s):

D. Lee ◽

S. Baek ◽

M. Ree ◽

O. Kim

Keyword(s):

Resistive Switching ◽

Anthranilic Acid ◽

Switching Characteristic ◽

Unipolar Resistive Switching ◽

Resistive Switching Characteristic

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Unipolar Resistive Switching Characteristic of Double-Layer ZrO2 Memory Device

ECS Meeting Abstracts ◽

10.1149/ma2012-01/2/49 ◽

2012 ◽

Keyword(s):

Double Layer ◽

Resistive Switching ◽

Memory Device ◽

Switching Characteristic ◽

Unipolar Resistive Switching ◽

Resistive Switching Characteristic

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Improvement of Resistive Switching Characteristic by Supercritical Fluid Technology

The International Photonics and Optoelectronics Meeting 2017 ◽

10.1364/isst.2017.isu5b.2 ◽

2017 ◽

Author(s):

Kuan-Chang Chang

Keyword(s):

Supercritical Fluid ◽

Resistive Switching ◽

Switching Characteristic ◽

Supercritical Fluid Technology ◽

Resistive Switching Characteristic

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Flexible Multifunctional Aromatic Polyimide Film: Highly Efficient Photoluminescence, Resistive Switching Characteristic, and Electroluminescence

ACS Applied Materials & Interfaces ◽

10.1021/acsami.8b02712 ◽

2018 ◽

Vol 10 (14) ◽

pp. 11430-11435 ◽

Cited By ~ 17

Author(s):

Lunjun Qu ◽

Lishuang Tang ◽

Runxin Bei ◽

Juan Zhao ◽

Zhenguo Chi ◽

...

Keyword(s):

Resistive Switching ◽

Polyimide Film ◽

Switching Characteristic ◽

Aromatic Polyimide ◽

Highly Efficient ◽

Resistive Switching Characteristic

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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Nanoscale Research Letters ◽

10.1186/s11671-019-2956-4 ◽

2019 ◽

Vol 14 (1) ◽

Cited By ~ 10

Author(s):

Xiangxiang Ding ◽

Yulin Feng ◽

Peng Huang ◽

Lifeng Liu ◽

Jinfeng Kang

Keyword(s):

Low Power ◽

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Switching Characteristic ◽

Resistive Switching Characteristic

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Resistive Switching Characteristic of Low-Temperature Top-Electrode-Free Tin-Oxide Memristor

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2724943 ◽

2017 ◽

Vol 64 (9) ◽

pp. 3951-3954 ◽

Cited By ~ 10

Author(s):

Chih-Chieh Hsu ◽

Po-Yang Chuang ◽

Yu-Ting Chen

Keyword(s):

Low Temperature ◽

Resistive Switching ◽

Tin Oxide ◽

Switching Characteristic ◽

Resistive Switching Characteristic

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Preparation of graphene oxide-polypyrrole-polyvinylferrocene ternary nanocomposite and its resistive-switching characteristic

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-018-0369-2 ◽

2018 ◽

Vol 30 (2) ◽

pp. 1001-1008

Author(s):

Ruyi Liu ◽

Xiuyuan Ni ◽

Jinrui Lin

Keyword(s):

Graphene Oxide ◽

Resistive Switching ◽

Switching Characteristic ◽

Ternary Nanocomposite ◽

Resistive Switching Characteristic

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Electrolyte-oxide-semiconductor structures as pH sensors based on resistive-switching characteristic

2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS) ◽

10.1109/memsys.2016.7421775 ◽

2016 ◽

Author(s):

H. Wang ◽

Z. Chen ◽

X. Chen ◽

W. Wu

Keyword(s):

Resistive Switching ◽

Oxide Semiconductor ◽

Ph Sensors ◽

Switching Characteristic ◽

Semiconductor Structures ◽

Resistive Switching Characteristic

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Chemical and Structural Effects of Lanthanide Trivalent Cation in Ln0.7Sr0.3MnO3(Ln=Pr and Sm) Perovskite Manganite on the Resistive Switching Characteristic

Current Nanoscience ◽

10.2174/1573413712666160104210019 ◽

2016 ◽

Vol 12 (4) ◽

pp. 477-481 ◽

Cited By ~ 1

Author(s):

Hong-Sub Lee ◽

Sun Gyu Choi ◽

Wooje Han ◽

Geun Young Yeom ◽

Hyung-Ho Park

Keyword(s):

Resistive Switching ◽

Trivalent Cation ◽

Perovskite Manganite ◽

Structural Effects ◽

Switching Characteristic ◽

Resistive Switching Characteristic

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Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid

IEEE Electron Device Letters ◽

10.1109/led.2015.2426055 ◽

2015 ◽

Vol 36 (6) ◽

pp. 558-560 ◽

Cited By ~ 16

Author(s):

Kuan-Chang Chang ◽

Tsung-Ming Tsai ◽

Ting-Chang Chang ◽

Rui Zhang ◽

Kai-Huang Chen ◽

...

Keyword(s):

Resistive Switching ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Silicon Oxide ◽

Oxide Electrode ◽

Switching Characteristic ◽

Indium Tin Oxide Electrode ◽

Resistive Switching Characteristic

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Resistive switching characteristic of Ce0.9Y0.1O2/TiO2 bi-layer structure by photochemical metal-organic deposition

Journal of the Korean Ceramic Society ◽

10.1007/s43207-019-00006-y ◽

2019 ◽

Vol 57 (1) ◽

pp. 73-79 ◽

Cited By ~ 1

Author(s):

Sung-Eun Kim ◽

Jin-Gyu Lee ◽

In-Young Choi ◽

Ha-Eun Kim ◽

Hong-Sub Lee

Keyword(s):

Resistive Switching ◽

Layer Structure ◽

Switching Characteristic ◽

Metal Organic ◽

Metal Organic Deposition ◽

Resistive Switching Characteristic

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