Low-consumption (below 2 W) continuous-wave singlemode quantum-cascade lasers grown by metal-organic vapour-phase epitaxy

2007 ◽  
Vol 43 (22) ◽  
pp. 1201 ◽  
Author(s):  
S. Blaser ◽  
A. Bächle ◽  
S. Jochum ◽  
L. Hvozdara ◽  
G. Vandeputte ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Quantum Cascade Lasers ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Quantum Cascade ◽  
Metal Organic ◽  
Organic Vapour ◽  
Cascade Lasers ◽  
Low Consumption

Double-metal waveguide ≃19 [micro sign]m quantum cascade lasers grown by metal organic vapour phase epitaxy

2007 ◽  
Vol 43 (23) ◽  
pp. 1284 ◽  
Author(s):  
J.A. Fan ◽  
M.A. Belkin ◽  
M. Troccoli ◽  
S. Corzine ◽  
D. Bour ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Quantum Cascade ◽  
Metal Waveguide ◽  
Metal Organic ◽  
Organic Vapour ◽  
Cascade Lasers

scholarly journals LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

2016 ◽  
Vol 24 (2) ◽  
Author(s):  
B. Ściana ◽  
M. Badura ◽  
W. Dawidowski ◽  
K. Bielak ◽  
D. Radziewicz ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Contact Layer ◽  
Vapour Phase ◽  
Main Task ◽  
Laser Applications ◽  
Vapour Phase Epitaxy ◽  
Quantum Cascade ◽  
Metal Organic ◽  
Organic Vapour ◽  
Si Doped

AbstractThe work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to InP grown by low pressure metal−organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of investigations was to obtain heavily doped InGaAs epilayers suitable for usage as plasmon−confinement layers in the construction of mid−infrared InAlAs/InGaAs/InP quantum−cascade lasers (QCLs). It requires the doping concentration of 1×10

scholarly journals Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 305 ◽  
Author(s):  
Maxim A. Ladugin ◽  
Irina V. Yarotskaya ◽  
Timur A. Bagaev ◽  
Konstantin Yu. Telegin ◽  
Andrey Yu. Andreev ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Quantum Cascade ◽  
Ultrathin Layers ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Short Period ◽  
Output Characteristics ◽  
Cascade Lasers ◽  
High Repeatability

AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500–2000 layers.

Sign in / Sign up

Export Citation Format

Share Document