Heteroepitaxy of polycrystalline 3C-SiC film on Si substrate using AlN buffer layer

2007 ◽  
Vol 43 (15) ◽  
pp. 832 ◽  
Author(s):  
G.S. Chung ◽  
K.S. Kim
Keyword(s):  
Buffer Layer ◽  
Si Substrate ◽  
Aln Buffer ◽  
Sic Film

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate

2014 ◽  
Vol 35 (6) ◽  
pp. 727-731
Author(s):  
陈翔 CHEN Xiang ◽  
邢艳辉 XING Yan-hui ◽  
韩军 HAN Jun ◽  
霍文娟 HUO Wen-juan ◽  
钟林健 ZHONG Lin-jian ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Epitaxial Film ◽  
Si Substrate ◽  
Aln Buffer

Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

2003 ◽  
Vol 240 (2) ◽  
pp. 429-432 ◽  
Author(s):  
T. Yamaguchi ◽  
Y. Saito ◽  
C. Morioka ◽  
K. Yorozu ◽  
T. Araki ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Epitaxial Film ◽  
Si Substrate ◽  
Aln Buffer

scholarly journals Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate

2016 ◽  
Vol 65 (8) ◽  
pp. 088501
Author(s):  
Wang Guang-Xu ◽  
Chen Peng ◽  
Liu Jun-Lin ◽  
Wu Xiao-Ming ◽  
Mo Chun-Lan ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Surface Roughening ◽  
Si Substrate ◽  
Aln Buffer

Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate

2011 ◽  
Vol 306-307 ◽  
pp. 201-205
Author(s):  
Kang Zhang ◽  
Tai Ping Lu ◽  
Shu Ti Li
Keyword(s):  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Threading Dislocation ◽  
Mean Square ◽  
Si Substrate ◽  
Aln Buffer ◽  
Metalorganic Chemical

The effect of AlN buffer layer on the quality of GaN epilayer grown on Si substrate by metalorganic chemical vapor deposition (MOCVD) has been investigated. It was found that the quality of GaN epilayer strongly related with the crystal quality of AlN buffer layer. As the full width at half maximum (FWHM) of AlN (0 0 2) plane increased from 1.23 degree to 3.41 degree, the FWHM of GaN (0 0 2) plane varied from 432 arcsec to 936 arcsec and the FWHM of GaN (1 0 2) plane varied from 677 arcsec to 1226 arcsec. Besides, more cracks formed and threading dislocation (TD) density increased. The deteriorated AlN buffer layer also led to a rougher morphology of the GaN layer, as can be seen from the root mean square (RMS) roughness of GaN layer which varied from 0.178 nm to 0.476 nm. And the morphology of AlN and the quality of GaN epilayer are not appear to be relevant due to the ruleless values of RMS roughness of AlN.

scholarly journals Новый метод получения объемных кристаллов AlN, GaN и AlGaN с использованием гибридных подложек SiC/Si

2019 ◽  
Vol 61 (12) ◽  
pp. 2338
Author(s):  
С.А. Кукушкин ◽  
Ш.Ш. Шарофидинов
Keyword(s):  
Single Crystal ◽  
Buffer Layer ◽  
High Growth ◽  
Si Substrate ◽  
Substitution Method ◽  
Subsequent Separation ◽  
Nitride Layers ◽  
Physical And Chemical ◽  
Sic Film ◽  
Hydride Epitaxy

The paper presents the main provisions of the new method of growing bulk, with a thickness of 100 μm or more, single-crystal AlN, AlGaN and GaN films on silicon poles with a silicon carbide buffer layer with their subsequent separation from the Si substrate. The main essence of this method is the combination of the method of chloride-hydride epitaxy, which ensures high growth rates of III-nitride layers using as substrate for growth, Si substrate with a buffer layer of a nanoscale atomic SiC film. The Si substrate with a SiC layer grown by the substitution method has a number of structural, physical, and chemical features as compared to SiC layers grown on Si by standard methods. It is shown that it is this feature that makes it possible to grow on its surface thick, uncracked layers of AlN, AlGaN and GaN, followed by their simple separation from the substrate. In this work, single-crystal uncracked layers were grown: AlN up to 300 microns thick; AlGaN thickness up to 400 microns; GaN thickness up to 200 microns; GaN semipolar (112 ̅4) orientation up to 35 microns.

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