Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

2003 ◽  
Vol 240 (2) ◽  
pp. 429-432 ◽  
Author(s):  
T. Yamaguchi ◽  
Y. Saito ◽  
C. Morioka ◽  
K. Yorozu ◽  
T. Araki ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Epitaxial Film ◽  
Si Substrate ◽  
Aln Buffer

Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate

2014 ◽  
Vol 35 (6) ◽  
pp. 727-731
Author(s):  
陈翔 CHEN Xiang ◽  
邢艳辉 XING Yan-hui ◽  
韩军 HAN Jun ◽  
霍文娟 HUO Wen-juan ◽  
钟林健 ZHONG Lin-jian ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Epitaxial Film ◽  
Si Substrate ◽  
Aln Buffer

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

scholarly journals Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate

2016 ◽  
Vol 65 (8) ◽  
pp. 088501
Author(s):  
Wang Guang-Xu ◽  
Chen Peng ◽  
Liu Jun-Lin ◽  
Wu Xiao-Ming ◽  
Mo Chun-Lan ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Surface Roughening ◽  
Si Substrate ◽  
Aln Buffer

Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate

2011 ◽  
Vol 306-307 ◽  
pp. 201-205
Author(s):  
Kang Zhang ◽  
Tai Ping Lu ◽  
Shu Ti Li
Keyword(s):  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Threading Dislocation ◽  
Mean Square ◽  
Si Substrate ◽  
Aln Buffer ◽  
Metalorganic Chemical

The effect of AlN buffer layer on the quality of GaN epilayer grown on Si substrate by metalorganic chemical vapor deposition (MOCVD) has been investigated. It was found that the quality of GaN epilayer strongly related with the crystal quality of AlN buffer layer. As the full width at half maximum (FWHM) of AlN (0 0 2) plane increased from 1.23 degree to 3.41 degree, the FWHM of GaN (0 0 2) plane varied from 432 arcsec to 936 arcsec and the FWHM of GaN (1 0 2) plane varied from 677 arcsec to 1226 arcsec. Besides, more cracks formed and threading dislocation (TD) density increased. The deteriorated AlN buffer layer also led to a rougher morphology of the GaN layer, as can be seen from the root mean square (RMS) roughness of GaN layer which varied from 0.178 nm to 0.476 nm. And the morphology of AlN and the quality of GaN epilayer are not appear to be relevant due to the ruleless values of RMS roughness of AlN.

scholarly journals Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 399
Author(s):  
Sang-Jo Kim ◽  
Semi Oh ◽  
Kwang-Jae Lee ◽  
Sohyeon Kim ◽  
Kyoung-Kook Kim
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Defect Density ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Growth Interruption ◽  
Aln Buffer

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

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