High-speed and memory-efficient VLSI design of 2D DWT for JPEG2000

2006 ◽  
Vol 42 (16) ◽  
pp. 907 ◽  
Author(s):  
K. Mei ◽  
N. Zheng ◽  
H. van de Wetering
Integration ◽  
2012 ◽  
Vol 45 (1) ◽  
pp. 1-8 ◽  
Author(s):  
Kishor Sarawadekar ◽  
Swapna Banerjee

Author(s):  
GOPALA KRISHNA.M ◽  
UMA SANKAR.CH ◽  
NEELIMA. S ◽  
KOTESWARA RAO.P

In this paper, presents circuit design of a low-power delay buffer. The proposed delay buffer uses several new techniques to reduce its power consumption. Since delay buffers are accessed sequentially, it adopts a ring-counter addressing scheme. In the ring counter, double-edge-triggered (DET) flip-flops are utilized to reduce the operating frequency by half and the C-element gated-clock strategy is proposed. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Speed-Power product is reduced by 56%-63% compared to other double edge triggered flip-flops. This design is suitable for high-speed, low-power CMOS VLSI design applications.


Author(s):  
Prof. Amruta Bijwar

Addition is the vital arithmetic operation and it acts as a base for many arithmetic operations such as multipliers, dividers, etc. A full adder acts as a basic component in complex circuits. Full adder is the essential segment in many applications such as DSP, Microcontroller, Microprocessor, etc. There exists an inevitable swap between speed and power indulgence in VLSI design systems. A new modified hybrid 1-bit full adder using TG is presented. Here, the circuit is replaced with a simple XNOR gate, which increases the speed. Due to this, transistor count gets reduced results in better optimization of area. The analysis has been carried out also for 2, 4, 8 and 16 bit and it is compared with the various techniques. The result shows a significant improvement in speed, area, power dissipation and transistor counts.


2004 ◽  
Vol 11 (2) ◽  
pp. 152-155 ◽  
Author(s):  
S.-F. Hsiao ◽  
Y.-H. Hu ◽  
T.-B. Juang
Keyword(s):  

2017 ◽  
Vol 25 (2) ◽  
pp. 1235-1248 ◽  
Author(s):  
Huichen Dai ◽  
Jianyuan Lu ◽  
Yi Wang ◽  
Tian Pan ◽  
Bin Liu

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