Over 1.3 [micro sign]m CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate

2004 ◽  
Vol 40 (18) ◽  
pp. 1120 ◽  
Author(s):  
N. Yamamoto ◽  
K. Akahane ◽  
S. Gozu ◽  
N. Ohtani
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Laser Emission ◽  
Cavity Surface ◽  
Cw Laser ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

1.55-µm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate

2006 ◽  
Vol 45 (4B) ◽  
pp. 3423-3426 ◽  
Author(s):  
Naokatsu Yamamoto ◽  
Kouichi Akahane ◽  
Shin-ichirou Gozu ◽  
Akio Ueta ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture

1997 ◽  
Vol 70 (18) ◽  
pp. 2356-2358 ◽  
Author(s):  
D. L. Huffaker ◽  
O. Baklenov ◽  
L. A. Graham ◽  
B. G. Streetman ◽  
D. G. Deppe
Keyword(s):  
Quantum Dot ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

2006 ◽  
Vol 18 (2) ◽  
pp. 418-420 ◽  
Author(s):  
H.C. Yu ◽  
J.S. Wang ◽  
Y.K. Su ◽  
S.J. Chang ◽  
F.I. Lai ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

scholarly journals Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection

2010 ◽  
Vol 22 (3) ◽  
pp. 179-181 ◽  
Author(s):  
Peng-Chun Peng ◽  
Ruei-Long Lan ◽  
Fang-Ming Wu ◽  
G. Lin ◽  
Chun-Ting Lin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Polarization Characteristics ◽  
Surface Emitting Laser ◽  
Vertical Cavity

The Characteristics of Optical Pumped GaN-Based Vertical Cavity Surface Emitting Laser Structures

2014 ◽  
Vol 692 ◽  
pp. 187-190 ◽  
Author(s):  
Yi Ting He ◽  
Xiao Yan Lei ◽  
Zhi Ren Qiu ◽  
Bao Ping Zhang ◽  
Na Lu ◽  
...  
Keyword(s):  
Laser Emission ◽  
Free Spectral Range ◽  
Longitudinal Mode ◽  
Excitation Intensity ◽  
Cavity Surface ◽  
Excitation Density ◽  
Time Resolved ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Time-resolved photoluminescence spectra of vertical cavity surface emitting laser (VCSEL) structures under different excitation intensity are investigated. The effect of the distributed Bragg reflectors (DBR) on the laser emission and the mechanism of multi-longitudinal-mode are analysed. A broad peak around 2.80eV is observed from the structure without DBR cavity when pumped under low excitation intensity. At higher excitation density up to 21.4kW/cm2, a lasing peak appears at 2.86eV, and exhibits a rapid growth and red shift with the increase of the excitation density. The decay time of the peak is about 66ps. When the spectrum is measured after the deposition of DBR on the top side of the grown nitride structure, the number of peaks increases to 7, and the free spectral range 0.21×1014 Hz is close to the value that calculated by the Fabry-Perot cavity length. After depositing the second DBR, multi PL peaks around 2.87eV are observed. The relationship of laser emission intensity and angle of the polarizer shows nearly a cosine square variation. However, the polarization characteristics of the four main peaks are different, which indicates that these peaks occurr by the oscillation of different optical cavities.

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