Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk∕SOI CMOS process

2003 ◽  
Vol 39 (4) ◽  
pp. 391 ◽  
Author(s):  
A.M. Moloney ◽  
A.P. Morrison ◽  
J.C. Jackson ◽  
A. Mathewson ◽  
J. Alderman ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Cmos Process ◽  
Transimpedance Amplifier ◽  
Monolithically Integrated ◽  
Soi Cmos

Optimisation of a Geiger mode avalanche photodiode imaging pixel based on a hybrid bulk SOI CMOS process

2007 ◽  
Author(s):  
Niall G. Coakley ◽  
Aoife M. Moloney ◽  
Andreas T. Schwarzbacher
Keyword(s):  
Avalanche Photodiode ◽  
Cmos Process ◽  
Geiger Mode ◽  
Soi Cmos

scholarly journals A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Cmos Technology ◽  
Open Loop ◽  
Transimpedance Amplifier ◽  
Mems Devices ◽  
Monolithically Integrated ◽  
Mems Resonators ◽  
Electromechanical Performance ◽  
Cmos Mems ◽  
Promising Solution ◽  
On Chip

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

Nano Letters ◽  
2011 ◽  
Vol 11 (2) ◽  
pp. 385-390 ◽  
Author(s):  
Linus C. Chuang ◽  
Forrest G. Sedgwick ◽  
Roger Chen ◽  
Wai Son Ko ◽  
Michael Moewe ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Light Emitting Diode ◽  
Avalanche Photodiode ◽  
Light Emitting ◽  
Monolithically Integrated

scholarly journals High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

2018 ◽  
Vol E101.C (7) ◽  
pp. 574-580
Author(s):  
Koichi IIYAMA ◽  
Takeo MARUYAMA ◽  
Ryoichi GYOBU ◽  
Takuya HISHIKI ◽  
Toshiyuki SHIMOTORI
Keyword(s):  
High Speed ◽  
Wavelength Region ◽  
Avalanche Photodiode ◽  
Cmos Process ◽  
High Responsivity ◽  
Standard Cmos Process ◽  
Blue Wavelength

On the great potential of non-doped MOSFETs for analog applications in partially-depleted SOI CMOS process

2005 ◽  
Vol 49 (5) ◽  
pp. 708-715 ◽  
Author(s):  
V. Kilchytska ◽  
D. Levacq ◽  
L. Vancaillie ◽  
D. Flandre
Keyword(s):  
Cmos Process ◽  
Soi Cmos

A Monolithically Integrated Silicon Photonics 8×8 Switch in 90nm SOI CMOS

2020 ◽  
Author(s):  
Jonathan E. Proesel ◽  
Nicolas Dupuis ◽  
Herschel Ainspan ◽  
Christian W. Baks ◽  
Fuad Doany ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
Monolithically Integrated ◽  
Integrated Silicon Photonics ◽  
Soi Cmos

scholarly journals A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 65
Author(s):  
Wenhao Zhi ◽  
Qingxiao Quan ◽  
Pingping Yu ◽  
Yanfeng Jiang
Keyword(s):  
Optical Communication ◽  
Integrated Circuit ◽  
Communication Systems ◽  
Complementary Metal Oxide Semiconductor ◽  
Avalanche Photodiode ◽  
Cmos Technology ◽  
Optical Signal ◽  
Oxide Semiconductor ◽  
Monolithically Integrated ◽  
Process Modification

Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems. In this paper, an avalanche photodiode (APD) is designed and fulfilled, which is compatible with Taiwan Semiconductor Manufacturing Company (TSMC) 45-nm standard complementary metal–oxide–semiconductor (CMOS) technology without any process modification. The APD based on 45 nm process is beneficial to realize a smaller and more complex monolithically integrated optoelectronic chip. The fabricated CMOS APD operates at 850 nm wavelength optical communication. Its bandwidth can be as high as 8.4 GHz with 0.56 A/W responsivity at reverse bias of 20.8 V. Its active area is designed to be 20 × 20 μm2. The Simulation Program with Integrated Circuit Emphasis (SPICE) model of the APD is also proposed and verified. The key parameters are extracted based on its electrical, optical and frequency responses by parameter fitting. The device has wide potential application for optical communication systems.

45 GHz silicon MESFETs on a 0.15 µm SOI CMOS process

2009 ◽  
Author(s):  
W. Lepkowski ◽  
S.J. Wilk ◽  
T.J. Thornton
Keyword(s):  
Cmos Process ◽  
Soi Cmos
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