Linearity of low microwave noise AlGaN∕GaN HEMTs

J.S. Moon; M. Micovic; A. Kurdoghlian; P. Janke; P. Hashimoto; W.-S. Wong; L. McCray

doi:10.1049/el:20020920

Linearity of low microwave noise AlGaN∕GaN HEMTs

Electronics Letters ◽

10.1049/el:20020920 ◽

2002 ◽

Vol 38 (22) ◽

pp. 1358 ◽

Cited By ~ 13

Author(s):

J.S. Moon ◽

M. Micovic ◽

A. Kurdoghlian ◽

P. Janke ◽

P. Hashimoto ◽

...

Keyword(s):

Gan Hemts ◽

Microwave Noise

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Microwave noise performances of AlGaN∕GaN HEMTs on semi-insulating 6H-SiC substrates

Electronics Letters ◽

10.1049/el:20040012 ◽

2004 ◽

Vol 40 (1) ◽

pp. 80 ◽

Cited By ~ 9

Author(s):

J.-W. Lee ◽

V. Kumar ◽

R. Schwindt ◽

A. Kuliev ◽

R. Birkhahn ◽

...

Keyword(s):

Gan Hemts ◽

Microwave Noise

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Study on the Temperature Dependence of the Microwave-Noise Characteristics in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2054098 ◽

2010 ◽

Vol 57 (9) ◽

pp. 2353-2357 ◽

Cited By ~ 3

Author(s):

Zhi Hong Liu ◽

Geok Ing Ng ◽

Subramaniam Arulkumaran

Keyword(s):

Temperature Dependence ◽

Noise Characteristics ◽

Gan Hemts ◽

Microwave Noise

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Device reliability study of GaN HEMTs using both low frequency noise and microwave noise temperature spectroscopy

2011 21st International Conference on Noise and Fluctuations ◽

10.1109/icnf.2011.5994370 ◽

2011 ◽

Cited By ~ 1

Author(s):

Hemant Rao ◽

Gijs Bosman

Keyword(s):

Noise Temperature ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Reliability Study ◽

Device Reliability ◽

Gan Hemts ◽

Microwave Noise

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Improved microwave noise performance in 0.15µm AlGaN/AlN/GaN HEMTs on Silicon

2014 44th European Microwave Conference ◽

10.1109/eumc.2014.6986703 ◽

2014 ◽

Cited By ~ 1

Author(s):

G. I. Ng ◽

S. Arulkumaran ◽

K. Ranjan ◽

S. Vicknesh

Keyword(s):

Noise Performance ◽

Gan Hemts ◽

Microwave Noise

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Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) ◽

10.1109/rfit.2009.5383707 ◽

2009 ◽

Cited By ~ 1

Author(s):

Z.H. Liu ◽

G.I. Ng ◽

S. Arulkumaran

Keyword(s):

Analytical Modeling ◽

Temperature Dependent ◽

Gan Hemts ◽

Microwave Noise

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Influence of the Al mole fraction on microwave noise performance of AlxGa1-xN/GaN HEMTs

2009 International Conference on Communications, Circuits and Systems ◽

10.1109/icccas.2009.5250398 ◽

2009 ◽

Author(s):

Yuehang Xu ◽

Yunchuan Guo ◽

Yunqui Wu ◽

Ruimin Xu ◽

Bo Yan

Keyword(s):

Mole Fraction ◽

Noise Performance ◽

Gan Hemts ◽

Microwave Noise

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Temperature-dependent microwave noise performances of AlGaN/GaN HEMTs with post-gate annealing

physica status solidi (c) ◽

10.1002/pssc.200461510 ◽

2005 ◽

Vol 2 (7) ◽

pp. 2659-2662 ◽

Cited By ~ 3

Author(s):

Dongmin Liu ◽

Jaesun Lee ◽

Wu Lu

Keyword(s):

Temperature Dependent ◽

Gan Hemts ◽

Microwave Noise

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Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

Electronics Letters ◽

10.1049/el.2010.2576 ◽

2010 ◽

Vol 46 (1) ◽

pp. 84 ◽

Cited By ~ 1

Author(s):

V. Hoel ◽

N. Defrance ◽

Y. Douvry ◽

J.C. De Jaeger ◽

N. Vellas ◽

...

Keyword(s):

Gan Hemts ◽

Microwave Noise

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Microwave noise performance of AlGaN/GaN HEMTs

Electronics Letters ◽

10.1049/el:20000152 ◽

2000 ◽

Vol 36 (2) ◽

pp. 175 ◽

Cited By ~ 32

Author(s):

A.T. Ping ◽

E. Piner ◽

J. Redwing ◽

M. Asif Khan ◽

I. Adesida

Keyword(s):

Noise Performance ◽

Gan Hemts ◽

Microwave Noise

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The microwave noise characteristics of InAlN/GaN HEMTs

2010 International Conference on Microwave and Millimeter Wave Technology ◽

10.1109/icmmt.2010.5524738 ◽

2010 ◽

Cited By ~ 3

Author(s):

Yongbo Chen ◽

Yunchuan Guo ◽

Wen Huang ◽

Ruimin Xu

Keyword(s):

Noise Characteristics ◽

Gan Hemts ◽

Microwave Noise

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