Low threshold current densities for II-VI lasers

2000 ◽  
Vol 36 (10) ◽  
pp. 878 ◽  
Author(s):  
M. Strassburg ◽  
O. Schulz ◽  
U.W. Pohl ◽  
D. Bimberg ◽  
M. Klude ◽  
...  
Keyword(s):  
Threshold Current ◽  
Low Threshold ◽  
Current Densities

Low-threshold current densities of 1.5-μm wavelength (110) GaInAs(P) QW lasers along [001] direction

2000 ◽  
Author(s):  
Kunishige Oe ◽  
Rajaram J. Bhat ◽  
Mineo Ueki ◽  
Manabu Mitsuhara
Keyword(s):  
Threshold Current ◽  
Low Threshold ◽  
Current Densities

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

2005 ◽  
Vol 475-479 ◽  
pp. 1663-1668 ◽  
Author(s):  
Rui-ying Zhang ◽  
Wei Wang ◽  
Fan Zhou ◽  
Jing Bian ◽  
Ling-juan Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multiple Quantum ◽  
Modulation Doping ◽  
Doping Effects ◽  
Low Threshold ◽  
Current Densities ◽  
First Time

1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.

scholarly journals Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer

2019 ◽  
Vol 9 (1) ◽  
pp. 162
Author(s):  
Ning An ◽  
Lei Ma ◽  
Guanyu Wen ◽  
Zhipeng Liang ◽  
Haitao Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Structure Design ◽  
Blocking Layer ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Current Densities ◽  
Better Than

A low threshold current density of 2 μm InGaAsSb/AlGaAsSb muti-quantum well (MQW) laser diode with carrier blocking layer (CBL) is demonstrated by simulation and fabrication. The carrier leakage is found to be theoretically suppressed for the devices with CBL. All the laser wafers are grown with a solid source Molecular Beam Epitaxy(MBE) System. Experimental results reveal the samples with CBL exhibits ultra-low threshold current densities of 142 A/cm2 and high slope efficiency of 0.158 W/A, which is better than 215 A/cm2 and 0.122 W/A achieved in the conventional InGaAsSb/AlGaAsSb LDs at room temperature. This improvement in device performance comes from meticulously designing the carrier blocking layers to increase carrier confinement and injection efficiency.

Low threshold current densities in red VCSELs

2000 ◽  
Vol 221 (1-4) ◽  
pp. 657-662 ◽  
Author(s):  
R. Butendeich ◽  
D. Graef ◽  
J. Schwarz ◽  
T. Ballmann ◽  
H. Schweizer ◽  
...  
Keyword(s):  
Threshold Current ◽  
Low Threshold ◽  
Current Densities

Heterolayer lead-salt diode lasers

1987 ◽  
Vol 65 (8) ◽  
pp. 999-1002
Author(s):  
Yonfeng Yang ◽  
B. K. Garside ◽  
P. E. Jessop
Keyword(s):  
Diode Lasers ◽  
Threshold Current ◽  
Lead Salt ◽  
Tunable Diode Lasers ◽  
Low Threshold ◽  
Current Densities ◽  
Dopant Atoms ◽  
Doping Profiles ◽  
Lattice Matched ◽  
Probe Measurements

Hot-wall epitaxy (HWE) has been used to grow heterostructure lead-salt materials from which low-threshold tunable diode lasers have been made. A new HWE structure consisting of a Pb(Se, Te) layer sandwiched between two lattice-matched (Pb, Sn)Te layers has resulted in lasers of good electrical and material quality, and threshold current densities as low as 200 A∙cm−2 (at 40 K). This occurred even though this structure is expected to be nonconfining to both light and electrical carriers. This result is due to the very rapid interdiffusion of dopant atoms between the epilayers during the growth process. Dopant interdiffusion has been investigated using an etch-back technique combined with hot-point probe measurements to observe changes in the doping profiles of the structures. Very large values for the diffusion constants of dopants have been deduced from these measurements: 2.3 × 10−15 and 1.1 × 10−15 cm2∙s−1 for Bi and Tl, respectively.

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