High injection efficiency readout circuit for low resistance infra-red detector

1999 ◽  
Vol 35 (18) ◽  
pp. 1507 ◽  
Author(s):  
Nanyoung Yoon ◽  
Byunghyuk Kim ◽  
Hee Chul Lee ◽  
Choong-Ki Kim
Keyword(s):  
Readout Circuit ◽  
Injection Efficiency ◽  
Low Resistance ◽  
High Injection ◽  
Infra Red

High-Power Laser Thyristors With High Injection Efficiency ($\lambda =890$ –910 nm)

2015 ◽  
Vol 27 (3) ◽  
pp. 307-310 ◽  
Author(s):  
Sergey O. Slipchenko ◽  
Aleksandr A. Podoskin ◽  
Alexsander V. Rozhkov ◽  
Nikita A. Pikhtin ◽  
Ilya S. Tarasov ◽  
...  
Keyword(s):  
High Power ◽  
High Power Laser ◽  
Power Laser ◽  
Injection Efficiency ◽  
High Injection

High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory

2009 ◽  
Vol 30 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Sung-Jin Choi ◽  
Jin-Woo Han ◽  
Moon-Gyu Jang ◽  
Jin Soo Kim ◽  
Kwang Hee Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Flash Memory ◽  
Low Voltage ◽  
Injection Efficiency ◽  
High Injection

Understanding the effects of the co-sensitizing ratio on the surface potential, electron injection efficiency, and Förster resonance energy transfer

2020 ◽  
Vol 22 (10) ◽  
pp. 5568-5576
Author(s):  
Jie Yang ◽  
Xing-Liang Peng ◽  
Zhu-Zhu Sun ◽  
Shuai Feng ◽  
Wei-Lu Ding ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Solar Cell ◽  
Surface Potential ◽  
Light Harvesting ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Injection Efficiency ◽  
Infra Red ◽  
Uv Visible ◽  
Electron Injection Efficiency

Multiple absorbers that function in different absorption regions (near infra-red (NIR) and UV-Visible (UV-Vis)) have been widely used in solar cell applications to enhance the light-harvesting.

A new high injection efficiency non-volatile memory cell: BipFlash

2002 ◽  
Vol 46 (11) ◽  
pp. 1739-1747
Author(s):  
David Esseni ◽  
Luca Selmi ◽  
Roberto Bez ◽  
Alberto Modelli
Keyword(s):  
Memory Cell ◽  
Injection Efficiency ◽  
High Injection ◽  
Non Volatile Memory ◽  
Volatile Memory

Injection efficiency of GaN based ultraviolet detector readout circuit

2017 ◽  
Vol 46 (11) ◽  
pp. 1120001
Author(s):  
马丁 Ma Ding ◽  
刘福浩 Liu Fuhao ◽  
李向阳 Li Xiangyang ◽  
张燕 Zhang Yan
Keyword(s):  
Readout Circuit ◽  
Injection Efficiency ◽  
Ultraviolet Detector
Sign in / Sign up

Export Citation Format

Share Document