High room temperature peak-to-valley current ratio in Si based Esaki diodes

1999 ◽  
Vol 35 (13) ◽  
pp. 1111 ◽  
Author(s):  
R. Duschl ◽  
O.G. Schmidt ◽  
G. Reitemann ◽  
E. Kasper ◽  
K. Eberl
Keyword(s):  
Room Temperature ◽  
Temperature Peak ◽  
Current Ratio

Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)

2010 ◽  
Vol 57 (11) ◽  
pp. 2857-2863 ◽  
Author(s):  
Michael Oehme ◽  
Marko Sarlija ◽  
Daniel Hahnel ◽  
Mathias Kaschel ◽  
Jens Werner ◽  
...  
Keyword(s):  
Room Temperature ◽  
Temperature Peak ◽  
Current Ratio ◽  
Tunneling Diodes ◽  
Very High

Search for High Damping Metallic Glasses

2006 ◽  
Vol 319 ◽  
pp. 151-156 ◽  
Author(s):  
Y. Hiki ◽  
M. Tanahashi ◽  
Shin Takeuchi
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Internal Friction ◽  
Metallic Glass ◽  
Room Temperature ◽  
Temperature Stability ◽  
Temperature Peak ◽  
High Temperature Side ◽  
Side Slope ◽  
Temperature Side

In a hydrogen-doped metallic glass, there appear low-temperature and high-temperature internal friction peaks respectively associated with a point-defect relaxation and the crystallization. The high-temperature-side slope of low-temperature peak and also the low-temperature-side slope of high-temperature peak enhance the background internal friction near the room temperature. A hydrogen-doped Mg-base metallic glass was proposed as a high-damping material to be used near and somewhat above the room temperature. Stability of the high damping was also checked.

scholarly journals Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Katsunori Makihara ◽  
Takeshi Kato ◽  
Yuuki Kabeya ◽  
Yusuke Mitsuyuki ◽  
Akio Ohta ◽  
...  
Keyword(s):  
Room Temperature ◽  
Current Ratio

Chemical Beam Epitaxy Grown Indium Gallium Arsenide Tunnel Junctions

1993 ◽  
Vol 300 ◽  
Author(s):  
N. Medelci ◽  
A. Bensaoula ◽  
M. F. Vilela ◽  
A. Freundlich
Keyword(s):  
Indium Gallium Arsenide ◽  
Room Temperature ◽  
Lattice Mismatch ◽  
Tunnel Junctions ◽  
Chemical Beam Epitaxy ◽  
Temperature Peak ◽  
Temperature Dependent ◽  
Peak Current ◽  
Device Structures ◽  
Lattice Matched

ABSTRACTp+/n+ In0.53Ga0.47As tunnel junctions with room temperature peak to valley ratio of 9:1 are demonstrated. The device structures were grown on both InP and GaAs (4% lattice mismatch) using Chemical Beam Epitaxy (CBE). Be and Si were used as dopants. The devices grown on InP exhibit room temperature peak current in excess of 1000 A/cm2. The peak current of 452 A/cm2 achieved on lattice mismatched material (GaAs) is comparable to the highest results previously reported on lattice matched material (InP). Finally, The device characteristics and the influence of different fabrication steps on the performance of these devices are discussed based on temperature dependent I-V measurements.

ESR study of activated carbon fibers: preliminary results

1993 ◽  
Vol 8 (9) ◽  
pp. 2282-2287 ◽  
Author(s):  
S.L. di Vittorio ◽  
A. Nakayama ◽  
T. Enoki ◽  
M.S. Dresselhaus ◽  
M. Endo ◽  
...  
Keyword(s):  
Activated Carbon ◽  
Specific Surface ◽  
Carbon Fibers ◽  
Room Temperature ◽  
Broad Peak ◽  
Activated Carbon Fibers ◽  
Temperature Peak ◽  
Dangling Bond ◽  
Surface Areas ◽  
Spin Resonance

We have carried out Electron Spin Resonance (ESR) measurements on activated carbon fibers (ACF) with specific surface areas (SSA) of 3000 and 2000 m2/g. The ESR spectrum of ACF fibers in air is extremely broad (500 to 1000 Gauss), and the spin susceptibility decreases rapidly with decreasing specific surface area. Also measured was the ESR signal of the desorbed fibers in vacuum. As a result of desorption, the broad peak decreases slightly in intensity, and a narrow (≍65 Gauss at room temperature) peak appears. We report results on the temperature dependence of both peaks. The narrow peak is interpreted as due to spins associated with dangling bonds, whereas we attribute the broad peak to the conduction carrier spins which is broadened by the boundary scattering process (T1 contribution) and the dipolar broadening process (T2 contribution) associated with the dangling bond spins.

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