scholarly journals Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Katsunori Makihara ◽  
Takeshi Kato ◽  
Yuuki Kabeya ◽  
Yusuke Mitsuyuki ◽  
Akio Ohta ◽  
...  
Keyword(s):  
Room Temperature ◽  
Current Ratio

Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov
Keyword(s):  
Conduction Band ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Quantum Effect ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Current Ratio ◽  
Si Substrates ◽  
Tunneling Diodes

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

High-Temperature Operation of Pentacene Field-Effect Transistors with Polyimide Gate Insulators

2005 ◽  
Vol 871 ◽  
Author(s):  
Tsuyoshi Sekitani ◽  
Shingo Iba ◽  
Yusaku Kato ◽  
Yoshiaki Noguchi ◽  
Takao Someya ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Current Ratio ◽  
Excellent Thermal Stability ◽  
Annealing Temperatures ◽  
High Temperature Operation ◽  
Thermal Stability Of

AbstractWe have fabricated pentacene field-effect transistors (FETs) on polyimide-sheet films with polyimide gate dielectric layers and parylene encapsulation layer, and investigated the high-temperature performance. It is found that the mobility of encapsulated FETs is enhanced from 0.5 to 0.8 cm2/Vs when the device is heated from room temperature to 160°C under light-shielding nitrogen environment. Furthermore, after the removal of annealing temperatures up to 160°C, the transistor characteristic of mobility and on/off current ratio show no significant changes, demonstration the excellent thermal stability of the present organic FETs.

Combinatorial Study on In-Ga-Zn-O Semiconductor Films as Active-channel Layers for Thin-film Transistor

2006 ◽  
Vol 928 ◽  
Author(s):  
Tatsuya Iwasaki ◽  
Naho Itagaki ◽  
Tohru Den ◽  
Hideya Kumomi ◽  
Kenji Nomura ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Chemical Compositions ◽  
Semiconductor Films ◽  
Mixed Gas ◽  
Current Ratio ◽  
Gas Atmosphere ◽  
Wide Compositional Range ◽  
Active Channel

ABSTRACTThe device characteristics of thin-film transistors (TFTs) having amorphous In-Ga-Zn-O channel layers with various chemical compositions were studied by using combinatorial synthesis techniques. The In-Ga-Zn-O films were prepared by a radio-frequency magnetron sputtering method at room temperature in mixed-gas atmosphere of argon and oxygen. The TFT libraries enabled us to systematically survey the device characteristics of the TFTs in a wide compositional range of channel materials. It is found that the TFT characteristics are very sensitive to the chemical composition ratio of In:Ga:Zn and depend also on the oxygen partial pressure during deposition. Some devices exhibited good performance of the field-effect mobility of ∼10 cm2V−1sec−1 and on-to-off current ratio of ∼108.

scholarly journals Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

Nano Letters ◽  
2010 ◽  
Vol 10 (2) ◽  
pp. 715-718 ◽  
Author(s):  
Fengnian Xia ◽  
Damon B. Farmer ◽  
Yu-ming Lin ◽  
Phaedon Avouris
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Current Ratio
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