V-band high-power/low-voltage InGaAs/InP composite channel HEMTs

1998 ◽  
Vol 34 (4) ◽  
pp. 409 ◽  
Author(s):  
P. Chevalier ◽  
X. Wallart ◽  
B. Bonte ◽  
R. Fauquembergue
Keyword(s):  
High Power ◽  
Low Voltage ◽  
Composite Channel ◽  
V Band

A review of high-power magnetoplasmodynamic electric propulsion designs and studies of RSC Energia

2020 ◽  
pp. 112-133
Author(s):  
Victor V. SINYAVSKIY
Keyword(s):  
Service Life ◽  
Electric Power ◽  
High Power ◽  
Electric Propulsion ◽  
Nuclear Power ◽  
Materials Science ◽  
Low Voltage ◽  
Power Input ◽  
Design Bureau ◽  
Rocket Propulsion

At the initiative of S.P.Korolev, in 1959, Special Design Bureau No.1 (now RSC Energia) established the High-temperature Power Engineering and Electric Propulsion Center which was tasked with development of nuclear electric propulsion for heavy interplanetary vehicles. Selected as the source of electric power was a nuclear power unit based on a thermionic converter reactor, and selected as the engine was a stationary low-voltage magnetoplasmodynamic (MPD) high-power (0.5–1.0 MW) thruster which had thousands of hours of service life. The paper presents the results of extensive efforts in research, development, design, materials science experiments, and tests on the MPD-thruster, including the results of development and 500-hours life tests of an MPD-thruster with a 500-600 kW electric power input that used lithium propellant. The world’s first lithium 17 kW MPD-thruster was built and successfully tested in space. The paper points out that to this day nobody has surpassed the then achievements of RSC Energia neither in thruster output during long steady-state operation, nor in performance and service life. Key words: Martian expeditionary vehicle, nuclear electric rocket propulsion system, electric rocket thruster, magnetoplasmodynamic thruster, lithium, cathode, anode, barium, electric propulsion tests in space.

scholarly journals Interleaved, Switched Inductor and High-Gain Wide Bandgap Based Boost Converter Proposal

Energies ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 800
Author(s):  
David Marroqui ◽  
Ausias Garrigós ◽  
Cristian Torres ◽  
Carlos Orts ◽  
Jose M. Blanes ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Low Voltage ◽  
High Gain ◽  
Wide Bandgap ◽  
High Power Density ◽  
Boost Converters ◽  
Proposal A ◽  
Current Ripples ◽  
Current Ripple

Many applications (electric vehicles, renewable energies, low-voltage DC grids) require simple, high-power density and low-current ripple-boost converters. Traditional step-up converters are limited when large transformation ratios are involved. In this work is proposed a step-up converter that brings together the characteristics of high gain, low ripple, and high-power density. From the converter proposal, a mathematical analysis of its operation is first performed, including its static transfer function, stress of components, and voltage and current ripples. Furthermore, it provides a design example for an application of Vin = 48 V to Vo = 270 V and 500 W. For its implementation, two different wide bandgap (WBG) semiconductor models have been used, hybrid GaN cascodes and SiC MOSFETs. Finally, the experimental results of the produced prototypes are shown, and the results are discussed.

scholarly journals DESIGN OF A V-BAND HIGH-POWER SHEET-BEAM COUPLED-CAVITY TRAVELING-WAVE TUBE

2012 ◽  
Vol 123 ◽  
pp. 31-45 ◽  
Author(s):  
Yang Liu ◽  
Jin Xu ◽  
Yan-Yu Wei ◽  
Xiong Xu ◽  
Fei Shen ◽  
...  
Keyword(s):  
High Power ◽  
Traveling Wave ◽  
Traveling Wave Tube ◽  
Wave Tube ◽  
V Band ◽  
Coupled Cavity

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

V-band high-power sheet-beam folded-waveguide traveling-wave tube

2012 ◽  
Vol 24 (11) ◽  
pp. 2698-2702
Author(s):  
刘洋 Liu Yang ◽  
徐进 Xu Jin ◽  
魏彦玉 Wei Yanyu ◽  
赖剑强 Lai Jianqiang ◽  
许雄 Xu Xiong ◽  
...  
Keyword(s):  
High Power ◽  
Traveling Wave ◽  
Traveling Wave Tube ◽  
Wave Tube ◽  
Folded Waveguide ◽  
V Band
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