scholarly journals Interleaved, Switched Inductor and High-Gain Wide Bandgap Based Boost Converter Proposal

Energies ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 800
Author(s):  
David Marroqui ◽  
Ausias Garrigós ◽  
Cristian Torres ◽  
Carlos Orts ◽  
Jose M. Blanes ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Low Voltage ◽  
High Gain ◽  
Wide Bandgap ◽  
High Power Density ◽  
Boost Converters ◽  
Proposal A ◽  
Current Ripples ◽  
Current Ripple

Many applications (electric vehicles, renewable energies, low-voltage DC grids) require simple, high-power density and low-current ripple-boost converters. Traditional step-up converters are limited when large transformation ratios are involved. In this work is proposed a step-up converter that brings together the characteristics of high gain, low ripple, and high-power density. From the converter proposal, a mathematical analysis of its operation is first performed, including its static transfer function, stress of components, and voltage and current ripples. Furthermore, it provides a design example for an application of Vin = 48 V to Vo = 270 V and 500 W. For its implementation, two different wide bandgap (WBG) semiconductor models have been used, hybrid GaN cascodes and SiC MOSFETs. Finally, the experimental results of the produced prototypes are shown, and the results are discussed.

High-Power-Density and High-Gain δ-Doped In[sub 0.425]Al[sub 0.575]As∕In[sub 0.425]Ga[sub 0.575]As Low-Voltage for Operation

2007 ◽  
Vol 154 (3) ◽  
pp. H185 ◽  
Author(s):  
Jun-Chin Huang ◽  
Wei-Chou Hsu ◽  
Ching-Sung Lee ◽  
Dong-Hai Huang ◽  
Yuan-Cheng Yang
Keyword(s):  
Power Density ◽  
High Power ◽  
Low Voltage ◽  
High Gain ◽  
High Power Density

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

Analysis of Current Mode in High Power Density Boost Converters with Magnetic Coupling

2016 ◽  
Vol 136 (10) ◽  
pp. 778-783
Author(s):  
Yasuo Sasaki ◽  
Yusuke Sugihara ◽  
Kimihiro Nanamori ◽  
Masayoshi Yamamoto
Keyword(s):  
Power Density ◽  
High Power ◽  
Magnetic Coupling ◽  
Current Mode ◽  
High Power Density ◽  
Boost Converters

An improved integrated control modeling of a high-power density interleaved non-inverting buck-boost DC-DC converter

2018 ◽  
Vol 15 (6) ◽  
pp. 688-699 ◽  
Author(s):  
Mohsen Karimi ◽  
Mohammad Pichan ◽  
Adib Abrishamifar ◽  
Mehdi Fazeli
Keyword(s):  
Power Density ◽  
High Power ◽  
Integrated Control ◽  
Input Current ◽  
High Power Density ◽  
Parallel Operation ◽  
Content Type ◽  
Two Stages ◽  
Conduction Mode ◽  
Current Ripple

PurposeThis paper aims to propose a novel integrated control method (ICM) for high-power-density non-inverting interleaved buck-boost DC-DC converter. To achieve high power conversion by conventional single phase DC-DC converter, inductor value must be increased. This converter is not suitable for industrial and high-power applications as large inductor value will increase the inductor current ripple. Thus, two-phase non-inverting interleaved buck-boost DC-DC converter is proposed.Design/methodology/approachThe proposed ICM approach is based on the theory of integrated dynamic modeling of continuous conduction mode (CCM), discontinuous conduction mode and synchronizing parallel operation mode. In addition, it involves the output voltage controller with inner current loop (inductor current controller) to make a fair balancing between two stages. To ensure fast transient performance, proposed digital ICM is implemented based on a TMS320F28335 digital signal microprocessor.FindingsThe results verify the effectiveness of the proposed ICM algorithm to achieve high voltage regulating (under 0.01 per cent), very low inductor current ripple (for boost is 1.96 per cent, for buck is 1.1) and fair input current balance between two stages (unbalancing current less than 0.5A).Originality/valueThe proposed new ICM design procedure is developed satisfactorily to ensure fast transient response even under high load variation and the solving R right-half-plane HP zeros of the CCM. In addition, the proposed method can equally divide the input current of stages and stable different parallel operation modes with large input voltage variations.

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