Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation

1996 ◽  
Vol 32 (21) ◽  
pp. 2026 ◽  
Author(s):  
H. Wang ◽  
G.I. Ng ◽  
M. Gilbert ◽  
P.J. O'Sullivan
Keyword(s):  
Silicon Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Fabrication of Silicon Nitride Ion Sensitive Field-Effect Transistor for pH Measurement and DNA Immobilization/Hybridization

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
U. Hashim ◽  
Soon Weng Chong ◽  
Wei-Wen Liu
Keyword(s):  
Silicon Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Biologically Active ◽  
Ph Measurement ◽  
Dna Immobilization ◽  
Buffer Solution ◽  
Effect Transistor ◽  
Sensing Membrane

The fabrication of ion sensitive field-effect transistor (ISFET) using silicon nitride (Si3N4) as the sensing membrane for pH measurement and DNA is reported. For the pH measurement, the Ag/AgCl electrode was used as the reference electrode, and different pH values of buffer solution were used in the ISFET analysis. The ISFET device was tested with pH buffer solutions of pH2, pH3, pH7, pH8, and pH9. The results show that the IV characteristic of ISFET devices is directly proportional and the device’s sensitivity was 43.13 mV/pH. The ISFET is modified chemically to allow the integration with biological element to form a biologically active field-effect transistor (BIOFET). It was found that the DNA immobilization activities which occurred on the sensing membrane caused the drain current to drop due to the negatively charged backbones of the DNA probes repelled electrons from accumulating at the conducting channel. The drain current was further decreased when the DNA hybridization took place.

Silicon Nitride in Field Effect Transistor-Based Integrated Circuits (FET ICs)

Si Silicon ◽  
1991 ◽  
pp. 233-238
Author(s):  
Eberhard F. Krimmel ◽  
Rudolf Hezel ◽  
Uwe Nohl ◽  
Rainer Bohrer
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals A silicon nitride ion sensitive field effect transistor‐based immunosensor for determination of urinary albumin

2021 ◽  
Author(s):  
Pawasuth Saengdee ◽  
Surachoke Thanapitak ◽  
Songpol Ongwattanakul ◽  
Awirut Srisuwan ◽  
Apirak Pankiew ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Urinary Albumin ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document