scholarly journals Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

2011 ◽  
Vol 32 (7) ◽  
pp. 871-873 ◽  
Author(s):  
Omid Habibpour ◽  
Sergey Cherednichenko ◽  
Josip Vukusic ◽  
Jan Stake
Keyword(s):  
Silicon Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Microwave Characterization ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

DNA hydrogel to improve solution-gate graphene field effect transistor in all-solid-state

2021 ◽  
Vol 16 (12) ◽  
pp. P12034
Author(s):  
S. Hu ◽  
Y. Jia
Keyword(s):  
Solid State ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Hydrogel Scaffold ◽  
Sensing Platform ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Dna Hydrogel

Abstract The solution-gate graphene field effect transistor (Sg-GFET), as a popular sensing platform, its applications are still hindered by the deficiency in all-solid-state, due to the dependence on liquid-state gate-dielectric. Inspired by DNA hydrogel which can provide microporous architecture to accommodate the fluidic analyte, moreover, its combination with graphene is believed to foster electron transport in the field of electrochemistry. We are interested to take advantage of DNA hydrogel's solid-state and capability for holding solution, and investigate whether it can replace the traditional solution. So pure DNA hydrogel, their complexes with GO (GO/DNA hydrogel) and RGO (RGO/DNA hydrogel) are studied herein. Their micro-porous 3D morphologies are demonstrated, their influences on the electrical characteristics of GFETs are carefully examined and proved to be able to maintain the typical bipolarity of Sg-GFET, firstly. Then, pure DNA hydrogel and GO/DNA hydrogel are selected as the optimized gate-dielectrics, because of their renewability after dehydration. Furthermore, by using aptamer-based heavy metal ions (Pb2+ and Hg2+) detections as proof-of-concept, the strategies for building the sensing platform based on the optimized hydrogel dielectric-gated GFETs are studied. It is found, for the purpose of substituting fluidic dielectric in traditional Sg-GFET, the scheme of directly mounting aptamer on graphene channel and coating pure DNA hydrogel on it is demonstrated to be better than the strategies of using GO/DNA hydrogel and hybriding aptamer probes in hydrogel scaffold. It is explained according to surface charge sensing mechanism. At last, the performances of the sensing platform based on the proposed DNA hydrogel gated GFETs are testified by the detections and selectivity examinations for Pb2+ and Hg2+. Conclusively, pure DNA hydrogel is expected to be a promising candidate in the future all-solid-state Sg-GFET.

Fabrication and Characterization of Graphene Field Effect Transistor: Study of Interfacial Effects for Device Reliability

2015 ◽  
Vol 36 ◽  
pp. 8-15
Author(s):  
Neetu Prasad ◽  
Anita Kumari ◽  
P.K. Bhatnagar ◽  
P.C. Mathur
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Interfacial Effects ◽  
Small Series ◽  
Increase With Increase ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Mos Device

In the present work, we report fabrication and electrical characterization of a back gated graphene field effect transistor (GFET). We have focused our study on the interfacial effect (graphene/SiO2) on the performance of the device. Hysteresis was observed in the drain conductance when measured with respect to dual gate sweep voltage, which increases with increasing sweeping voltage range. The conductance was observed to increase with increase in temperature but there was no reduction in the hysteresis. This proved that temperature annealing could improve the channel conductivity but not the interfacial effects. Further, a metal oxide semiconductor (MOS) device was fabricated with SLG inserted in between the metal and oxide layer and its capacitance-voltage (C-V) characteristics were studied. A small series capacitance (2.1 nF) was observed to be existing in series with the oxide capacitance (4.5 nF) which was attributed to the trap states at the interface of graphene and SiO2­ layer. Also, the flat band voltage was not affected by the incorporation of graphene layer in the MOS device indicating no change in the work function of the metal gate (Cr/Au). This is an advantageous situation where graphene does not alter its work function also being impermeable, restricts the diffusion of metal particles through the SiO2.

scholarly journals Performance Characterization of Schottky Tunneling Graphene Field Effect Transistor at 60 nm Gate Length

2017 ◽  
Vol 46 (7) ◽  
pp. 1089-1095
Author(s):  
Noor Faizah Zainul Abidin ◽  
Ibrahim Ahmad ◽  
Pin Jern Ker ◽  
P. Susthitha Menon
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Length ◽  
Performance Characterization ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

scholarly journals Channel length scaling and electrical characterization of graphene field effect transistor (GFET)

2019 ◽  
Vol 15 (2) ◽  
pp. 697
Author(s):  
Reena Sri Selvarajan ◽  
Azrul Azlan Hamzah ◽  
Norliana Yusof ◽  
Burhanuddin Yeop Majlis
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Characterization ◽  
Channel Length ◽  
Short Channel ◽  
Conducting Channel ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Length Scaling

<p>The exclusive monoatomic framework of graphene makes it as an alluring material to be implemented in electronic devices. Thus, using graphene as charge carrying conducting channel material in Field Effect Transistors (FET) expedites the opportunities for production of ultrasensitive biosensors for future device applications. However, performance of GFET is influenced by various parameters, particularly by the length of conducting channel. Therefore, in this study we have investigated channel length scaling in performance of graphene field effect transistor (GFET) via simulation technique using Lumerical DEVICE software. The performance was analyzed based on electrical characterization of GFET with long and short conducting channels. It proves that conducting channel lengths have vast effect on ambipolar curve where short channel induces asymmetry in transfer characteristics curve where the n-branch is suppressed. Whereas for output characteristics, the performance of GFET heavily degraded as the channel length is reduced in short channels of GFET. Therefore, channel length scaling is a vital parameter in determining the performance of GFET in various fields, particularly in biosensing applications for ultrasensitive detection.</p>

Microwave Characterization of a Field Effect Transistor with Dielectrophoretically-Aligned Single Silicon Nanowire

2010 ◽  
Vol 49 (6) ◽  
pp. 06GG12 ◽  
Author(s):  
Myung-Gil Kang ◽  
Jae-Hyun Ahn ◽  
Jongwoon Lee ◽  
Dong-Hoon Hwang ◽  
Hee-Tae Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Microwave Characterization ◽  
Effect Transistor
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